Photoelectronic element and the manufacturing method thereof
View Patent ↗A photoelectronic element includes an electrically insulative substrate, an electrically conductive substrate, an intermediate layer and a semiconductor stacked layer. The electrically insulative substrate has a top surface. The electrically conductive substrate has a lower portion, and an upper portion surrounded by the electrically insulative substrate and coplanar with the top surface. The intermediate layer has a first portion formed directly under the electrically insulative substrate and above the electrically conductive substrate, a second portion and a bent portion formed between the first portion and the second portion. The semiconductor stacked layer has an light-emitting active layer with a high band gap, disposed on the electrically insulative substrate and the upper portion.
1. A photoelectronic element, comprising:
an electrically insulative substrate having a top surface;
an electrically conductive substrate having a lower portion, and an upper portion surrounded by the electrically insulative substrate and coplanar with the top surface;
an intermediate layer having a first portion formed directly under the electrically insulative substrate and above the electrically conductive substrate, a second portion and a bent portion formed between the first portion and the second portion; and
a semiconductor stacked layer disposed on the electrically insulative substrate and the upper portion;
wherein the semiconductor stacked layer comprises a light emitting layer with a high band gap.
2. The photoelectronic element of claim 1 , wherein the second portion surrounds the upper portion.
3. The photoelectronic element of claim 1 , wherein the electrically insulative substrate is arranged to cover a part of the lower portion and expose the upper portion.
4. The photoelectronic element of claim 1 , wherein the intermediate layer has an upper maximum width and a lower maximum width greater than the upper maximum width.
5. The photoelectronic element of claim 1 , wherein the upper portion has a thickness substantially equal to that of the electrically insulative substrate.
6. The photoelectronic element of claim 1 , wherein the electrically insulative substrate comprises an opening substantially occupied by the upper portion.
7. The photoelectronic element of claim 1 , wherein the second portion is arranged between the upper portion and the electrically insulative substrate.
8. The photoelectronic element of claim 1 , wherein the first portion is arranged between the lower portion and the electrically insulative substrate.
9. The photoelectronic element of claim 1 , wherein the intermediate layer comprises a reflective layer.