IP Library Granted Patent US 8,512,809
Granted Patent B2
US 8,512,809 · App. 12/751,734 · Granted Aug 20, 2013

Method of processing multilayer film

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,512,809
App. No.
12/751,734
Granted
Aug 20, 2013
Kind
B2
Abstract

A method of processing a multilayer film is provided. The method includes providing a substrate film having a substrate film first surface and a substrate film second surface. The method also includes providing a barrier layer adjacent to the substrate film second surface. The barrier layer has at least one opening allowing fluid communication between the substrate film and an outer surface of the barrier layer. Further, the method includes contacting the substrate film first surface with a first reactant and finally contacting the outer surface of the barrier layer with a second reactant, said second reactant being reactive with said first reactant. The method of contacting the substrate film first surface to the first reactant and contacting the outer surface of the barrier layer to the second reactant is carried out under conditions under which reaction between said first reactant and the second reactant results in a formation of a reaction layer.

Claims (25)

1. A method of processing a multilayer film, said method comprising:

providing a substrate film having a substrate film first surface and a substrate film second surface, wherein the substrate film is transparent and flexible;

depositing or coating a barrier layer on said substrate film second surface, said barrier layer having at least one opening allowing fluid communication between the substrate film and an outer surface of the barrier layer;

exposing the substrate film first surface with a first reactant; and

exposing said outer surface of the barrier layer with a second reactant, said second reactant being reactive with said first reactant;

wherein said exposing the substrate film first surface to the first reactant and said exposing said outer surface of the barrier layer to the second reactant is carried at above a glass transition temperature of the substrate film and under conditions under which a reaction between said first reactant and said second reactant results in a formation of a reaction layer.

2. The method according to claim 1 , wherein the formation of the reaction layer plugs said opening in the barrier layer.

3. The method according to claim 1 , wherein the at least one opening in the barrier layer is a pinhole imperfection or a crack.

4. The method according to claim 1 , wherein said substrate film comprises a thermoplastic.

5. The method according to claim 1 , wherein said barrier layer comprises a zero-valent metal and said zero-valent metal is selected from the group consisting of gold, silver, and aluminum.

6. The method according to claim 1 , wherein a barrier layer material is selected from a group comprising a metal, nitrides, organic materials, inorganic materials and ceramic materials.

7. The method according to claim 1 , wherein said exposing the substrate film first surface with a first reactant, and said exposing said outer surface of the barrier layer with a second reactant, is carried out synchronously.

8. The method according to claim 1 , wherein said first reactant is selected from a group comprising water, sulfur, selenium, tellurium, oxygen, alcohol, ammonia, or a hydride or a sulfide of a non-metal.

9. The method according to claim 1 , wherein said second reactant is an orthosilicate.

10. The method according to claim 1 , wherein said second reactant is selected from a group comprising a metal halide, a metal alkyl compound, a metal alkoxide, an orthosilicate, a metal beta-diketonato compound, a metal cyclopentadienyl compound, a metal carboxylate, a metal carbonyl, a metal hydride, a metal alkylamide or silylamide, or a bimetallic compound, or combinations thereof.

11. The method according to claim 1 , wherein the substrate film is an organic film.

12. The method according to claim 1 , wherein the method comprises adding an organometallic compound for adhesion of said first reactant to the substrate film and the barrier layer.

13. The method according to claim 1 , wherein the method comprises providing an additional energy for reaction from a source selected from a group consisting of an ultra-sound system, a plasma source and an ultra-violet radiation source.

14. A method of forming a reaction layer on a polymeric substrate film, said method comprising:

providing the polymeric substrate film having a first outer surface and a second outer surface, wherein the polymeric substrate film is transparent and flexible;

exposing the first outer surface with a first reactant; and

exposing the second outer surface of the polymeric substrate film with a second reactant, said second reactant being reactive with said first reactant to form the reaction layer;

wherein said polymeric substrate film is permeable to the first reactant allowing a reaction between said first reactant and said second reactant on the second outer surface of the polymeric substrate film, wherein the reaction is carried at above a glass transition temperature of the polymeric substrate film.

15. The method according to claim 14 , wherein the polymeric substrate film comprises a thermoplastic.

16. The method according to claim 14 , wherein the method further comprises providing a plurality of barrier layers adjacent to the polymeric substrate film.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2016
From: GENERAL ELECTRIC COMPANY
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 038490/0022 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 15, 2016
From: GENERAL ELECTRIC COMPANY
To: BOE TECHNOLOGY GROUP CO., LTD.
Reel/Frame 038439/0315 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 9, 2010
From: HELLER, CHRISTIAN MARIA ANTON; DUGGAL, ANIL RAJ; COYLE, DENNIS JOSEPH; YAN, MIN; ERLAT, AHMET GUN; ZHAO, RI-AN
To: GENERAL ELECTRIC COMPANY
Reel/Frame 024506/0927 →