Semiconductor module
View Patent ↗A controlled-punch-through semiconductor device with a four-layer structure is disclosed which includes layers of different conductivity types, a collector on a collector side, and an emitter on an emitter side which lies opposite the collector side. The semiconductor device can be produced by a method performed in the following order: producing layers on the emitter side of wafer of a first conductivity type; thinning the wafer on a second side; applying particles of the first conductivity type to the wafer on the collector side for forming a first buffer layer having a first peak doping concentration in a first depth, which is higher than doping of the wafer; applying particles of a second conductivity type to the wafer on the second side for forming a collector layer on the collector side; and forming a collector metallization on the second side. At any stage particles of the first conductivity type can be applied to the wafer on the second side for forming a second buffer layer with a second peak doping concentration lower than the first peak doping concentration of the first buffer layer, but higher than the doping of the wafer. A third buffer layer can be arranged between the first depth and the second depth with a doping concentration which is lower than the second peak doping concentration of the second buffer layer. Thermal treatment can be used for forming the first buffer layer, the second buffer layer and/or the collector layer.
1. A controlled-punch-through semiconductor device comprising:
a four-layer structure having a collector on a collector side and an emitter on an emitter side which lies opposite the collector side;
a base layer between the emitter and the collector;
a first buffer layer, which lies on the collector side between the base layer and the collector, the first buffer layer having in a first depth from the collector a first peak doping concentration, which is higher than the base layer;
a second buffer layer, which lies between the first buffer layer and the base layer, the second buffer layer having in a second depth from the collector a second peak doping concentration which is lower than the first peak doping concentration of the first buffer layer; and
a third buffer layer arranged between the second depth and the first depth with a doping concentration which is higher than the doping of the base layer and which is lower than the second peak doping concentration of the second buffer layer.
2. Semiconductor device according to claim 1 , wherein the third buffer layer has a minimum doping concentration of at least 5*1014 cm−3.
3. Semiconductor device according to claim 1 , wherein the first peak doping concentration of the first buffer layer lies in a first depth between 0 to 2 μm from the collector, and /or the second peak doping concentration of the second buffer layer lies in a second depth between 3 to 10 μm from the collector and/or the distance between the first and second depth is in a range between 1 μm and 10 μm.
4. Semiconductor device according to claim 1 , wherein the third buffer layer has a minimum doping concentration of at least 7*1014 cm−3.
5. Semiconductor device according to claim 1 , wherein the third buffer layer has a minimum doping concentration of at least 1*1015 cm−3.
6. Semiconductor device according to claim 3 , wherein the first peak doping concentration of the first buffer layer lies in the first depth between 0.8 to 1.2 μm from the collector.
7. Semiconductor device according to claim 1 , wherein the first peak doping concentration of the first buffer layer lies in a first depth between 0.9 to 1.1 μm from the collector, and/or the second peak doping concentration of the second buffer layer lies in a second depth between 5 to 8 μm from the collector and/or the distance between the first and second depth is in a range between 4 μm and 7 μm.
8. Semiconductor device according to claim 1 , wherein the first, second and third buffer layers are of a first conductivity type.