Electronic device, method of producing the same, and display device
An electronic device includes: a substrate; a lower electrode which is provided on the substrate and has an edge portion cross-section having a taper angle of 60° or less; a SiO 2 film which is provided on the lower electrode, the SiO 2 film including hydrogen atoms in a ratio of 3 atomic % or less, and having a refractive index n of 1.475 or less at a wavelength of 650 nm; and an upper electrode which is provided on the SiO 2 film and has an overlapping portion with the lower electrode.
1. An electronic device comprising:
a substrate;
a lower electrode which is provided on the substrate and has an edge portion cross-section having a taper angle of 60° or less;
a SiO 2 film which is provided on the lower electrode, the SiO 2 film comprising hydrogen atoms in a ratio of 3 atomic % or less, and having a refractive index n of 1.475 or less at a wavelength of 650 nm; and
an upper electrode which is provided on the SiO 2 film and has an overlapping portion with the lower electrode.
2. The electronic device according to claim 1 , wherein the lower electrode comprises an oxide electroconductive film.
3. A display device comprising the electronic device according to claim 1 .
4. The electronic device of claim 1 , wherein the lower electrode is subjected to an oxygen plasma treatment or a UV ozone treatment.
5. The electronic device according to claim 1 , wherein a material of the lower electrode is at least one selected from the group consisting of Al, Mo, Cr, Ta, Ti, Au, Ag Al—Nd, APC, and Mo—Nb.
6. The electronic device according to claim 2 , wherein a material of the oxide electroconductive film is indium zinc oxide (IZO).
7. A method of producing an electronic device, the method comprising, in the following order:
forming, on a substrate, a lower electrode which has an edge portion cross-section having a taper angle of 60° or less;
forming an insulating film on the lower electrode by performing sputtering at a pressure of 0.05 Pa to 0.3 Pa; and
forming an upper electrode on the insulating film in such a manner that the upper electrode has an overlapping portion with the lower electrode.
8. The method of producing an electronic device according to claim 7 , wherein, in the formation of the insulating film, the insulating film is formed at a substrate temperature of 200° C. or less.
9. The method of producing an electronic device according to claim 7 , wherein the insulating film comprises a SiO 2 film having a refractive index n of 1.475 or less at a wavelength of 650 nm.
10. The method of claim 7 , wherein the sputtering is performed at a pressure of from 0.1 Pa to 0.2 Pa.
11. The method of claim 7 , wherein the lower electrode is further subjected to an oxygen plasma treatment or a UV ozone treatment.
12. The method according to claim 7 , wherein a material of the lower electrode is at least one selected from the group consisting of Al, Mo, Cr, Ta, Ti, Au, Ag Al—Nd, APC, and Mo—Nb.
13. The method of producing an electronic device claim 7 , wherein the lower electrode comprises an oxide electroconductive film.
14. The method according to claim 13 , wherein a material of the oxide electroconductive film is indium zinc oxide (IZO).