Semiconductor device
A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and a sealing member. The first semiconductor substrate has a surface and includes a sensing portion on the surface side. The sensing portion has a movable portion. The first semiconductor substrate and the second semiconductor substrate are bonded together to form a stacked substrate. The stacked substrate defines a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates. The stacked substrate further defines a recess extending between the first semiconductor substrate and the second semiconductor substrate to penetrate an interface between the first semiconductor substrate and the second semiconductor substrate. The sealing member is located in the recess.
1. A semiconductor device comprising:
a first semiconductor substrate having a surface and including a sensing portion on the surface side, the sensing portion having a movable portion;
a second semiconductor substrate having first and second surfaces opposite to each other,
the first surface of the second semiconductor substrate bonded to the surface of the first semiconductor substrate to form a stacked substrate,
the stacked substrate defining a hermetically sealed space for accommodating the sensing portion between the first and second semiconductor substrates,
the stacked substrate further defining a recess extending between the first and second semiconductor substrates to penetrate an interface between the first and second substrates; and
a sealing member in the recess, wherein
the second semiconductor substrate includes a through electrode extending from the first surface to the second surface of the second semiconductor substrate and electrically connected to the sensing portion of the first semiconductor substrate, and
the recess comprises at least two recess portions,
one recess portion being located closer to a center of the second surface of the second semiconductor substrate than the through electrode, and
the other recess portion being located closer to an outer edge of the second surface of the second semiconductor substrate than the through electrode.