Capacitors having composite dielectric layers containing crystallization inhibiting regions
Integrated circuit capacitors have composite dielectric layers therein. These composite dielectric layers include crystallization inhibiting regions that operate to increase the overall crystallization temperature of the composite dielectric layer. An integrated circuit capacitor includes first and second capacitor electrodes and a capacitor dielectric layer extending between the first and second capacitor electrodes. The capacitor dielectric layer includes a composite of a first dielectric layer extending adjacent the first capacitor electrode, a second dielectric layer extending adjacent the second capacitor electrode and an electrically insulating crystallization inhibiting layer extending between the first and second dielectric layers. The electrically insulating crystallization inhibiting layer is formed of a material having a higher crystallization temperature characteristic relative to the first and second dielectric layers.
1. An integrated circuit capacitor, comprising:
lower and upper capacitor electrodes; and
a capacitor dielectric layer extending between said lower and upper capacitor electrodes, said capacitor dielectric layer comprising a composite of a first dielectric layer extending directly on said lower capacitor electrode, a second dielectric layer extending directly on said upper capacitor electrode and a third dielectric layer extending between the first and second dielectric layers, said third dielectric layer having a higher crystallization temperature characteristic relative to the first and second dielectric layers and a thickness less than respective thicknesses of the first and second dielectric layers;
wherein the third dielectric layer is formed of Al 2 O 3 or AlN; and
wherein the first and second dielectric layers are formed of ZrO 2 ; and
wherein at least one of the first and second dielectric layers comprises nitrogen-doped ZrO 2 .
2. The capacitor of claim 1 , further comprising a capping layer on said upper capacitor electrode, said capping layer comprising a material selected from a group consisting of silicon germanium, polysilicon and tungsten.
3. An integrated circuit capacitor comprising:
a lower electrode and an upper electrode; and
at least one first dielectric layer and at least one second dielectric layer interposed between the lower electrode and the upper electrode, the first dielectric layer extending directly on the lower electrode and the second dielectric layer extending directly on the first dielectric layer opposite to the lower electrode,
wherein the second dielectric layer has a higher crystallization temperature than that of the first dielectric layer and is thinner than the first dielectric layer;
wherein the first dielectric layer is a nitrogen-doped ZrO 2 layer and the second dielectric layer is an Al 2 O 3 layer or an AlN layer.
4. The integrated circuit capacitor of claim 3 , wherein the first dielectric layer and the second dielectric layer are alternately stacked two and more times.
5. The integrated circuit capacitor of claim 3 , wherein the higher crystallization temperature of the second dielectric layer raises the crystallization temperature of the first dielectric layer and the second dielectric layer during a back-end processing of the integrated circuit capacitor.
6. The integrated circuit capacitor of claim 3 , wherein the second dielectric layer has a thickness of the range between 0.1 nm and 2 nm.
7. An integrated circuit capacitor, comprising:
lower and upper capacitor electrodes on a substrate; and
a capacitor dielectric layer extending between said lower and upper capacitor electrodes, said capacitor dielectric layer comprising a composite of a first dielectric layer extending directly on said lower capacitor electrode, a second dielectric layer extending directly on said upper capacitor electrode and a third dielectric layer extending between the first and second dielectric layers, said first and second dielectric layers comprising ZrO 2 and said third dielectric layer comprising at least one of Al 2 O 3 and AlN and having a thickness less than respective thicknesses of said first and second dielectric layers.
8. The capacitor of claim 7 , further comprising a capping layer on said upper capacitor electrode, said capping layer comprising a material selected from a group consisting of silicon germanium, polysilicon and tungsten.
9. An integrated circuit capacitor, comprising:
a lower electrode and an upper electrode on a substrate; and
at least one first dielectric layer and at least one second dielectric layer extending between said lower and upper electrodes, said first dielectric layer extending directly on said lower electrode and said second dielectric layer extending between said first dielectric layer and said upper electrode and contacting said first dielectric layer;
wherein said second dielectric layer is thinner than said first dielectric layer; and
wherein said first dielectric layer is a ZrO 2 layer and said second dielectric layer is an Al 2 O 3 layer or an AlN layer having a higher crystallization temperature relative to said first dielectric layer.
10. The capacitor of claim 9 , wherein said at least one first dielectric layer comprises two first dielectric layers and said at least one second dielectric layer comprises two second dielectric layers; and wherein said first and second dielectric layers are stacked in an alternating arrangement.
11. The capacitor of claim 9 , wherein said second dielectric layer has a thickness in a range from about 0.1 nm to about 2 nm.