Light emitting devices with inhomogeneous quantum well active regions
View Patent ↗A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer.
1. A method of fabricating a light emitting device comprising:
growing a crystal layer as a quantum well layer within the light emitting device; and
modulating a process parameter during the growing of the quantum well layer such that the quantum well layer is inhomogeneous and has a non-random, periodic, composition fluctuation across the quantum well layer; and
doping a section of the quantum well layer having a higher bandgap than other sections of the quantum well layer.
2. The method of claim 1 , wherein modulating the process parameter comprises alternately increasing and decreasing a flow rate of a metal organic source gas during a metal organic chemical vapor deposition process.
3. The method of claim 2 , wherein alternately increasing and decreasing the flow rate of the metal organic source gas comprises alternately starting and stopping the flow rate.
4. The method of claim 1 , wherein modulating the process parameter comprises alternately increasing and decreasing a process temperature during a molecular beam epitaxy process.
5. The method of claim 1 , wherein modulating the process parameter comprises alternately increasing and decreasing a process pressure during a chemical beam epitaxy process.