Method of fabricating element including nanogap electrodes
View Patent ↗Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.
1. A fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the method comprising:
forming the first electrode;
forming a spacer in contact with an upper surface of the first electrode;
forming a stopper on the upper surface of the spacer;
forming an insulating film to cover the stopper, the spacer and the first electrode;
forming a first depressed section on the insulating film to expose an upper surface of the stopper;
forming a second depressed section on the stopper to expose the upper surface of the spacer;
forming the second electrode in contact with an upper surface of the spacer exposed by the second depressed section; and
removing the spacer to form the gap,
wherein the gap is sized such that a resistive state is changed by a tunnel current that occurs when a predetermined voltage is applied between the first electrode and the second electrode.
2. A fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the method comprising:
forming the first electrode;
forming a stopper on the upper surface of the first electrode;
forming an insulating film to cover the stopper and the first electrode;
forming a first depressed section on the insulating film to expose an upper surface of the stopper;
forming a second depressed section on the stopper to expose the upper surface of the first electrode;
forming a spacer in contact with an upper surface of the first electrode exposed by the second depressed section;
forming the second electrode in contact with an upper surface of the spacer; and
removing the spacer to form the gap,
wherein the gap is sized such that a resistive state is changed by a tunnel current that occurs when a predetermined voltage is applied between the first electrode and the second electrode.
3. The fabrication method of an element with nanogap electrodes according to claim 1 , wherein the spacer is formed by performing a predetermined surface processing on the upper surface of the first electrode.
4. The fabrication method of an element with nanogap electrodes according to claim 1 , wherein:
the insulating film includes silicon oxide;
the spacer includes silicon nitride; and
the spacer is removed using mixed gas including CF 4 gas, O 2 gas and N 2 gas.
5. The fabrication method of an element with nanogap electrodes according to claim 1 , wherein:
the first depressed section is formed using an etching gas that etches the insulating film but does not etch the stopper.
6. The fabrication method of an element with nanogap electrodes according to claim 1 , wherein:
the second depressed section is formed using an etching gas that etches the stopper but does not etch the spacer.
7. The fabrication method of an element with nanogap electrodes according to claim 5 , wherein:
the insulating film includes silicon oxide;
the spacer includes silicon nitride; and
the etching gas used to form the first depressed section is C 4 F 8 gas.
8. The fabrication method of an element with nanogap electrodes according to claim 6 , wherein:
the stopper includes aluminum oxide;
the spacer includes silicon nitride; and
the etching gas used to form the second depressed section is Cl 2 gas.