Granted Patent B2

US 8,859,886 · App. 12/756,799 · Granted Oct 14, 2014

Abstract

Claims (20)

1. A method for fabricating a multijunction solar cell, comprising:

providing a germanium substrate comprising germanium material;

depositing a first layer over and directly in contact with the germanium material of the substrate the first layer being a phosphorus-containing nucleation layer;

depositing a second layer containing an arsenic dopant over the nucleation layer, the nucleation layer serving as a diffusion barrier to the arsenic dopant such that diffusion of the arsenic dopant into the germanium material of the substrate is limited in depth by the nucleation layer, wherein phosphorus material contained in the nucleation layer serves as a source of a dopant that forms a n-p junction in the germanium material of the substrate and wherein a two-step diffusion profile of arsenic and phosphorus forms a diffusion region in the germanium material of the substrate resulting in a shallow n-p junction in the substrate, and wherein an upper portion of the diffusion region has a higher concentration of phosphorus atoms than arsenic atoms, and a lower portion of the diffusion region has a higher concentration of arsenic atoms than phosphorus atoms; and

depositing a sequence of layers over the second layer forming at least one solar subcell.

2. The method as recited in claim 1 , wherein the nucleation layer comprises a material having a similar lattice parameter as the germanium substrate.

3. The method as recited in claim 1 , wherein the nucleation layer comprises InGaP.

4. The method as recited in claim 1 , wherein the nucleation layer has a thickness of 350 angstroms or less.

5. The method as recited in claim 1 , wherein the n-p junction is located between 0.3 μm and 0.7 μm from a top surface of the substrate adjoining the nucleation layer.

6. The method as recited in claim 1 , wherein diffusion of the arsenic dopant into the first layer primarily involves solid state diffusion.

7. The method as recited in claim 1 , wherein the sequence of layers over the second layer forms a second solar subcell including a layer of either GaAs or InGaAs.

8. The method as recited in claim 7 , further comprising disposing a third solar subcell over the second solar subcell.

9. The method as recited in claim 8 , wherein the third solar subcell includes InGaP.

10. The method as recited in claim 1 , wherein a depth of diffusion of the arsenic dopant in the diffusion region is greater than a depth of diffusion of the phosphorus dopant in the two-step diffusion region.

11. A method for fabricating a multijunction solar cell, comprising:

providing a p-type substrate composed entirely of p-type semiconductor material;

depositing a phosphorus-containing nucleation layer adjacent the p-type substrate;

depositing a sequence of layers of semiconductor material over the nucleation layer, the sequence of layers of semiconductor material forming a plurality of solar subcells and including an arsenic-containing buffer layer adjacent the nucleation layer such that the nucleation layer is interposed between the buffer layer and the p-type substrate; and

diffusing phosphorus atoms from the nucleation layer and arsenic atoms from the buffer layer into the p-type substrate during deposition of the sequence of layers of semiconductor material to form an n-p junction in the p-type substrate so that an additional solar subcell of the multijunction solar cell is formed, wherein a two-step diffusion profile of arsenic and phosphorus forms a diffusion region in the p-type substrate resulting in a shallow n-p junction in the p-type substrate, and wherein an upper portion of the diffusion region has a higher concentration of phosphorus atoms than arsenic atoms, and a lower portion of the diffusion region has a higher concentration of arsenic atoms than phosphorus atoms.

12. The method as recited in claim 11 , wherein diffusion of the arsenic atoms into the p-type substrate primarily involves solid state diffusion.

Assignments (8)