Organic light emitting device with a low-resistance cathode
View Patent ↗Provided is an organic light emitting device including an anode, a cathode, and a light emitting layer disposed between the anode and the cathode, wherein the cathode has a structure including a first metal layer and a second metal layer, or a structure including a first metal layer, a second metal layer, and one selected from the group consisting of an oxide layer, a nitride layer, and a nitric oxide layer, and wherein the cathode has low resistance.
1. An organic light emitting device comprising:
an anode;
a cathode; and
a light emitting layer disposed between the anode and the cathode,
the cathode having a structure comprising a first metal layer, a second metal layer, and a capping layer selected from the group consisting of MoOx, Al 2 O 3 , Sb 2 O 3 , BaO, CdO, CaO, Ce 2 O 3 , CoO, Cu 2 O, DyO, GdO, HfO 2 , La 2 O 3 , Li 2 O, MgO, NbO, NiO, Nd 2 O 3 , PdO, Sm 2 O 3 , ScO, SiO 2 , SrO, Ta 2 O 3 , TiO, WO 3 , VO 2 , YbO, Y 2 O 3 , ZnO, ZrO, wherein x is in a range of 2 to 4, a nitride layer, and a nitric oxide layer,
wherein a metal of the second metal layer is Ag, and the first metal layer is an alloy of Ag and Yb, and
wherein a weight ratio of Yb to Ag in the first metal layer is approximately 0.1:1 to approximately 15:1.
2. The organic light emitting device of claim 1 , wherein a weight ratio of the Yb to Ag in the first metal layer is approximately 4:1 to approximately 10:1.
3. The organic light emitting device of claim 1 , wherein the first metal layer has a thickness in a range of about 60 Å to about 100 Å.
4. The organic light emitting device of claim 1 , wherein the second metal layer has a thickness in a range of about 50 Å to about 500 Å.
5. The organic light emitting device of claim 1 , wherein the second metal layer has a thickness in a range of about 100 Å to about 300 Å.
6. The organic light emitting device of claim 1 , wherein the refractive index of the capping layer is in a range of about 1.5 to about 2.5.
7. The organic light emitting device of claim 1 , wherein the refractive index of the capping layer is in a range of about 1.7 to about 2.2.
8. The organic light emitting device of claim 1 , wherein the thickness of the capping layer is in a range of about 100 Å to about 1500 Å.
9. The organic light emitting device of claim 1 , wherein the thickness of the capping layer is in a range of about 300 Å to about 700 Å.
10. The organic light emitting device of claim 1 , wherein the capping layer comprises at least one selected from the group consisting of AlN, BN, NbN, SiN, TaN, TiN, VN, YbN, and ZrN.
11. The organic light emitting device of claim 1 , wherein the capping layer comprises SiON or AlON.