THERMOELECTRIC ALLOYS WITH IMPROVED THERMOELECTRIC POWER FACTOR
A thermoelectric material and a method of using a thermoelectric device are provided. The thermoelectric material includes at least one compound having a general composition of (Bi 1-x-z Sb x A z ) u (Te 1-y Se y ) w . The component A includes at least one Group IV element, and the other components are in the ranges of 0≦x≦1, 0≦y≦1, 0<z≦0.10, 1.8≦u≦2.2, and 2.8≦w≦3.2. The method of using a thermoelectric device can include exposing the thermoelectric material to a temperature greater than about 173 K.
1 . A thermoelectric material comprising at least one compound having a general composition of (Bi 1-x-z Sb x A z ) u (Te 1-y Se y ) w , wherein 0≦x≦1, 0≦y≦1, 0<z≦0.10, 1.8≦u ≦2.2, 2.8≦w≦3.2, and the component A comprises at least one Group IV element.
2 . The thermoelectric material of claim 1 , wherein the A component is selected from the group consisting of tin, lead, and germanium.
3 . The thermoelectric material of claim 1 , wherein the A component comprises tin.
4 . The thermoelectric material of claim 3 , wherein the at least one compound comprises a dopant concentration such that the hole concentration is greater than about 2×10 19 cm −3 at 300 K.
5 . The thermoelectric material of claim 3 , wherein the at least one compound comprises a dopant concentration such that the hole concentration is between about 2×10 19 cm −3 and about 10×10 19 cm −3 between about 260 K and about 300 K.
6 . The thermoelectric material of claim 3 , wherein the at least one compound comprises a dopant concentration such that the hole concentration is between about 3×10 19 cm −3 and about 7×10 19 cm −3 between about 260 K and about 300 K.
7 . The thermoelectric material of claim 3 , wherein 0<z≦0.01.
8 . The thermoelectric material of claim 3 , wherein 0.005≦z≦0.01.
9 . The thermoelectric material of claim 3 , wherein 0.005≦z≦0.05.
10 . The thermoelectric material of claim 3 , wherein the at least one compound comprises at least one tin-induced resonant level.
11 . The thermoelectric material of claim 3 , wherein the at least one compound comprises at least one tin-induced resonant level and at least one second valence band.
12 . The thermoelectric material of claim 3 , wherein the at least one compound comprises at least one additional alloying element.
13 . A thermoelectric material comprising at least one compound comprising a solid solution of bismuth, tellurium, and tin, wherein the at least one compound further comprises at least one tin-induced resonant level, at least one second valence band, and a dopant concentration such that the hole concentration is between about 2×10 19 cm −3 and about 8×10 19 cm −3 between about 260 K and about 300 K.
14 . A method of using a thermoelectric device comprising:
providing a thermoelectric device comprising a thermoelectric material that comprises at least one compound having a general composition of (Bi 1-x-z Sb x A z ) u (Te 1-y Se y ) w , wherein 0≦x≦1, 0≦y≦1, 0<z≦0.10, 1.8≦u≦2.2, 2.8≦w≦3.2, and the component A comprises at least one Group IV element; and
exposing at least a portion of the thermoelectric material to a temperature greater than about 173 K during operation of the thermoelectric device.
15 . The method of claim 14 , wherein 0.005≦z≦0.05.
16 . The thermoelectric material of claim 14 , wherein the at least one compound comprises at least one tin-induced resonant level.
17 . The thermoelectric material of claim 14 , wherein the at least one compound comprises at least one tin-induced resonant level and at least one second valence band.
18 . The method of claim 14 , wherein at least one portion of the thermoelectric material is exposed to a temperature in a range between about 173 K and about 500 K during operation of the thermoelectric device.
19 . The method of claim 14 , wherein at least one portion of the thermoelectric material is exposed to room temperature during operation of the thermoelectric device.
20 . The method of claim 14 , wherein at least one portion of the thermoelectric material is exposed to a temperature greater than about 350 K during operation of the thermoelectric device.
21 . The method of claim 14 , wherein at least one portion of the thermoelectric material is exposed to a temperature between about 260 K and about 300 K during operation of the thermoelectric device and the at least one compound comprises a dopant concentration such that the hole concentration is greater than about 2×10 19 cm −3 between about 260 K and about 300 K.
22 . The method of claim 14 , wherein at least one portion of the thermoelectric material is exposed to a temperature between about 260 K and about 300 K during operation of the thermoelectric device and the at least one compound comprises a dopant concentration such that the hole concentration is between about 2×10 19 cm −3 and about 7×10 19 cm −3 between about 260 K and about 300 K.