Edge illuminated photodiodes
View Patent ↗This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions.
1. An edge illuminated photodiode comprising:
a substrate with at least a top side, a bottom side, a proximate edge side, a distal edge side, a right side, and a left side, wherein said top side comprises
a first region having a textured surface adapted to receive light reflected within said photodiode and trap light within said photodiode;
a second region, wherein said second region has been subjected to anode metal plating;
a third region having an impurity of a first selected conductivity type; and
a fourth region having an impurity of a second selected conductivity type, wherein the third region does not physically overlap with the fourth region.
2. The edge illuminated photodiode of claim 1 wherein the first region is heavily doped.
3. The edge illuminated photodiode of claim 1 wherein the first region is p+ doped using a p type dopant, wherein said p type dopant is at least one of Zn, Be, boron, or gallium.
4. The edge illuminated photodiode of claim 1 wherein the first region has a length of approximately 75 μm and a width of approximately 35 μm.
5. The edge illuminated photodiode of claim 1 wherein the first region comprises a plurality of square base pyramidal prisms.
6. The edge illuminated photodiode of claim 1 wherein the first and selected conductivity types are both n-type.
7. The edge illuminated photodiode of claim 1 wherein a portion of a periphery of at least one of the third region or fourth region is delimited by a length of cathode metal plating.
8. The edge illuminated photodiode of claim 1 wherein the bottom side comprises a cathode metallization layer.
9. The edge illuminated photodiode of claim 1 wherein the proximate edge side comprises a region doped with an impurity of a first conductivity type.
10. The edge illuminated photodiode of claim 1 wherein the first conductivity type is n-type.
11. The edge illuminated photodiode of claim 10 wherein the n-type conductivity is achieved using a n-type dopant and wherein the n-type dopant is at least one of phosphorus, arsenic, or antimony.
12. The edge illuminated photodiode of claim 11 wherein the n-type dopant creates a n+ doping layer and wherein said n+ doping layer is approximately 0.5 μm to 1 μm deep.
13. The edge illuminated photodiode of claim 1 wherein the distal edge side comprises a side angled relative to said bottom side.
14. The edge illuminated photodiode of claim 10 wherein an inner face of said distal edge side forms an angle with an inner face of said bottom side, and wherein said angle is greater than 90 degrees.
15. The edge illuminated photodiode of claim 1 wherein said edge illuminated photodiode has a detection range and wherein said detection range is from 800 nm to 1700 nm.
16. An edge illuminated photodiode comprising:
a substrate with at least a top side, a bottom side, a proximate edge side, a distal edge side, a right side, and a left side, wherein said top side comprises a first region having a textured surface adapted to receive light reflected within said photodiode and trap light within said photodiode and a second region, wherein said second region has been subjected to anode metal plating and wherein said distal side forms an angle with said bottom side greater than 90 degrees.
17. The edge illuminated photodiode of claim 16 wherein said edge illuminated photodiode has an operating voltage of approximately −5 V.
18. The edge illuminated photodiode of claim 16 wherein said edge illuminated photodiode has a minimum responsivity of approximately 0.70 A/W.
19. The edge illuminated photodiode of claim 16 wherein said edge illuminated photodiode has a dark current of less than 1 nA.