SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 x M 2 O 3 .y SiO 2 Chemical Formula 1 wherein M is a Group 13 element and x and y are real numbers wherein 0<2 x <y and x+y=1; a first electrode in electrical communication with the p-type layer of the semiconductor substrate; and a second electrode in electrical communication with the n-type layer of the semiconductor substrate.
1 . A solar cell comprising:
a semiconductor substrate including a p-type layer and an n-type layer;
a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1:
x M 2 O 3 .y SiO 2 Chemical Formula 1
wherein M is a Group 13 element and x and y are real numbers wherein 0<2x<y and x+y=1;
a first electrode in electrical communication with the p-type layer of the semiconductor substrate; and
a second electrode in electrical communication with the n-type layer of the semiconductor substrate.
2 . The solar cell of claim 1 , wherein M comprises boron, aluminum, gallium, indium, thallium, or a combination comprising at least one of the foregoing.
3 . The solar cell of claim 2 , wherein M comprises boron or aluminum.
4 . The solar cell of claim 1 , wherein the dielectric layer has a thickness of about 1 nanometer to about 100 nanometers.
5 . The solar cell of claim 1 , further comprising a protective layer disposed on a surface of the dielectric layer, wherein the protective layer has a refractive index which is lower than a refractive index of the dielectric layer.
6 . The solar cell of claim 5 , wherein the protective layer comprises silicon nitride, silicon oxide, aluminum oxide, or a combination comprising at least one of the foregoing.
7 . The solar cell of claim 5 , wherein the protective layer has a thickness of about 100 nanometers to about 700 nanometers.
8 . The solar cell of claim 1 , wherein the semiconductor substrate further comprises a first side and an opposite second side, the dielectric layer is disposed on the first side of semiconductor substrate, and
the solar cell further comprises an anti-reflection coating disposed on the second side of the semiconductor substrate.
9 . The solar cell of claim 8 , wherein the n-type layer is adjacent to the first side of the semiconductor substrate and the p-type layer is adjacent to the second side of the semiconductor substrate.
10 . The solar cell of claim 8 , wherein the p-type layer is adjacent to the first side of the semiconductor substrate and the n-type layer is adjacent to the second side of the semiconductor substrate.
11 . A method of manufacturing a solar cell, the method comprising:
disposing a semiconductor substrate including a p-type layer and an n-type layer;
disposing a dielectric layer including a silicate represented by the following Chemical Formula 1 on a side of the semiconductor substrate:
x M 2 O 3 .y SiO 2 Chemical Formula 1
wherein M is a Group 13 element and x and y are real numbers wherein 0<2x<y and x+y=1;
disposing a first electrode in electrical communication with the p-type layer of the semiconductor substrate; and
disposing a second electrode in electrical communication with the n-type layer of the semiconductor substrate to form the solar cell.
12 . The method of claim 11 , wherein M comprises boron, aluminum, gallium, indium, thallium, or a combination comprising at least one of the foregoing.
13 . The method of claim 12 , wherein M comprises boron or aluminum.
14 . The method of claim 11 , wherein the disposing of the dielectric layer comprises disposing a silicon source, an M source, and an oxygen-containing gas.
15 . The method of claim 14 , wherein the silicon source comprises a compound including silicon, the compound including silicon having a moiety covalently bonded to the silicon, the moiety being hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aromatic group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted amide group, or a combination comprising at least one of the foregoing.
16 . The method of claim 15 , wherein the silicon source comprises tetraethoxysilane.
17 . The method of claim 14 , wherein the M source comprises a compound including a Group 13 element, the compound including the Group 13 element having a moiety covalently bonded to the Group 13 element, the moiety being hydrogen, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C3 to C30 cycloalkyl group, a substituted or unsubstituted C6 to C30 aromatic group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted amide group, or a combination comprising at least one of the foregoing.
18 . The method of claim 17 , wherein the Group 13 element is boron or aluminum.
19 . The method of claim 17 , wherein the M source comprises trimethylaluminum, trimethylboron, or a combination comprising at least one of the foregoing.
20 . The method of claim 14 , wherein the oxygen-containing gas comprises oxygen, ozone, or a combination comprising at least one of the foregoing.
21 . The method of claim 11 , wherein the disposing of the dielectric layer comprises atomic layer deposition or plasma enhanced chemical vapor deposition.