Method of fabricating thin film solar cell and apparatus for fabricating thin film solar cell
View Patent ↗Disclosed is a method of fabricating a thin film solar cell including introducing a reaction solution into a reaction chamber, fixing a supporter onto a loader, disposing the loader in the reaction chamber to immerse the supporter into the reaction solution, and heating the supporter and coating a buffer layer. In addition, an apparatus of fabricating a thin film solar cell including a reaction chamber mounted with an inlet of a reaction solution and an outlet of waste water, and a loader disposed in the reaction chamber and being capable of moving up and down, is disclosed.
1. A method of fabricating a thin film solar cell comprising:
introducing a reaction solution into a reaction chamber, wherein the reaction solution comprises a metal source material;
fixing a supporter to a loader by vacuum, wherein the supporter is a substrate or an electrode;
disposing a light absorbing layer on a surface of the supporter;
disposing the loader in the reaction chamber to immerse the supporter with the light absorbing layer into the reaction solution; and then
heating the supporter to form a buffer layer on the light absorbing layer, wherein heating is carried out by electric heating or lamp heating the loader.
2. The method of claim 1 , wherein the reaction solution further comprises a complexing agent.
3. The method of claim 2 , wherein the complexing agent comprises one selected from the group consisting of ammonia, hydrazine, an alkanol amine, an alcohol, and combinations thereof.
4. The method of claim 1 , wherein the metal source material comprises a metal selected from the group consisting of cadmium (Cd), zinc (Zn), indium (In), and combinations thereof.
5. The method of claim 1 , wherein the reaction solution further comprises an anion source material.
6. The method of claim 5 , wherein the anion source material comprises one selected from the group consisting of S, Se, Te, O, OH, and combinations thereof.
7. The method of claim 1 , wherein the entire supporter or only the surface of the supporter is immersed in the reaction solution.
8. The method of claim 1 , wherein the supporter is heated to a temperature for the surface of the supporter which contacts the reaction solution, of about 20° C. to about 100° C.
9. The method of claim 1 , wherein each of the loader and the supporter has thermal conductivity of about 30% or more.
10. The method of claim 1 , wherein each of the loader and the supporter has thermal conductivity of about 50% or more.
11. The method of claim 1 , wherein the reaction chamber further comprises an agitator.
12. The method of claim 1 , wherein the reaction chamber further comprises an ultrasonic wave vibrator.