Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater
View Patent ↗An optical device having a structured active region configured for one or more selected wavelengths of light emissions of 500 nm and greater, but can be others.
1. An optical device configured to emit electromagnetic radiation of about 500 nm and greater comprising:
a gallium nitride substrate member having a nonpolar crystalline surface region;
an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness from 100 nm to 3000 nm and a Si doping level of 5E17 to 3E18 cm-3;
an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium of between 3% and 7% and a thickness from 40 to 60 nm;
a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising seven 3.5-4.5 nm InGaN quantum wells separated by eight 9.5-10.5 nm GaN barriers;
a p-side SCH layer overlying the multiple quantum well active region, the p-side SCH layer comprised of InGaN with molar a fraction of indium of between 2% and 5% and a thickness from 15 nm to 25 nm;
an electron blocking layer overlying the p-side SCH layer, the electron blocking layer comprised of AlGaN with molar fraction of aluminum of between 15% and 22% and a thickness from 10 nm to 15 nm and doped with Mg;
a p-GaN cladding layer overlying the electron blocking layer, the p-GaN cladding layer having a thickness from 400 nm to 1000 nm with Mg doping level of 5E17 cm-3 to 1E19 cm-3; and
a p++-GaN contact layer overlying the p-GaN cladding layer, the p++-GaN contact layer having a thickness from 20 nm to 40 nm with Mg doping level of 1E20 cm-3 to 1E21 cm-3.
2. The optical device of claim 1 wherein the non-polar crystalline surface region is characterized by an off cut of −0.8 to −1.2 degrees towards a (0001)-plane and −0.3 to 0.3 degrees towards a (11-20)-plane.
3. An optical device comprising:
a gallium nitride substrate member having a semipolar crystalline surface region;
an n-GaN cladding layer overlying the surface region, the n-GaN cladding layer having a thickness from 100 nm to 3000 nm and a Si doping level of 5E17 to 3E18 cm-3;
an n-side SCH layer overlying the n-GaN cladding layer, the n-side SCH layer comprised of InGaN and having a molar fraction of indium of between 3% and 7% and a thickness from 40 to 60 nm;
a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprising seven 3.5-4.5 nm InGaN quantum wells separated by eight 9.5-10.5 nm GaN barriers;
a p-side SCH layer overlying the multiple quantum well active region, the p-side SCH layer comprised of InGaN with molar a fraction of indium of between 2% and 5% and a thickness from 15 nm to 25 nm;
an electron blocking layer overlying the p-side SCH layer, the electron blocking layer comprised of AlGaN with molar fraction of aluminum of between 15% and 22% and a thickness from 10 nm to 15 nm and doped with Mg;
a p-GaN cladding layer overlying the electron blocking layer, the p-GaN cladding layer having a thickness from 400 nm to 1000 nm with Mg doping level of 5E17 cm-3 to 1E19 cm-3; and
a p++-GaN contact layer overlying the p-GaN cladding layer, the p++-GaN contact layer having a thickness from 20 nm to 40 nm with Mg doping level of 1E20 cm-3 to 1E21 cm-3.