Semiconductor device, active matrix device, electro-optical device, and electronic apparatus
View Patent ↗A method of manufacturing a semiconductor device includes: forming, on one surface of a substrate, source electrodes and drain electrodes, a semiconductor layer provided between the source electrodes and the drain electrodes, and a gate insulator layer provided to cover a surface of the semiconductor layer; forming an insulator layer on a surface of the gate insulator layer, the insulator layer having through portions; and forming electrodes on the gate insulator layer around the bottom of the through portions and on the insulator layer in the vicinity of the through portions by a vapor film formation method simultaneously so as not to come into contact with each other, forming gate electrodes by using the electrodes formed on the gate insulator layer, and forming pixel electrodes electrically connected to the source electrodes or the drain electrodes by using the electrodes foamed on the insulator layer.
1. A semiconductor device comprising:
a substrate;
transistors each having a source electrode and a drain electrode provided on a surface of the substrate to be separated from each other, a semiconductor layer provided at least between the source electrode and the drain electrode, a gate insulator layer provided so as to cover a surface of the semiconductor layer opposite to the substrate, and a gate electrode provided on a surface of the gate insulator layer opposite to the semiconductor layer;
an insulator layer provided on a surface of the gate insulator layer opposite to the semiconductor layer; and
pixel electrodes each provided on a surface of the insulator layer opposite to the gate insulator layer and electrically connected to the corresponding source electrode or the corresponding drain electrode,
wherein the insulator layer has through portions, each of which passes therethrough in the thickness direction with an increasing width from the corresponding pixel electrode side toward the gate insulator layer side, and
the gate electrode is provided on the gate insulator layer around the bottom of the corresponding through portion.
2. The semiconductor device according to claim 1 ,
wherein conductor portions are provided so as to pass through the gate insulator layer and the insulator layer in the thickness direction and to electrically connect the source electrodes or the drain electrodes and the pixel electrodes to each other.
3. The semiconductor device according to claim 1 ,
wherein the gate electrodes and the pixel electrodes are formed simultaneously by a vapor film formation method.
4. An active matrix device comprising:
the semiconductor device according to claim 1 .
5. An electro-optical device comprising:
the active matrix device according to claim 4 .
6. An electronic apparatus comprising:
the electro-optical device according to claim 5 .