Solid-state image capture device, manufacturing method therefor, and electronic apparatus

1. A solid-state image capture device comprising:

at least one photoelectric converter provided in a substrate to receive incident light at a light-receiving surface of the photoelectric converter via an image capture surface of the substrate and photoelectrically convert the incident light to thereby generate signal charge;

at least one on-chip lens provided on the image capture surface of the substrate and above and in alignment with the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and

an antireflection layer provided on an upper surface of the on-chip lens, which upper surface faces away from the light-receiving surface;

wherein,

the antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin,

the antireflection layer is formed above the light-receiving surface such that a distribution density of the low-refractive-index particles increases as a distance from the light-receiving surface increases,

the on-chip lenses are convex lenses that protrude upward in a convex shape away from the light-receiving surface and are disposed adjacent to each other so as to correspond to the photoelectric converters,

the antireflection layer is provided so as to cover upper surfaces of the on-chip lenses,

the antireflection layer is provided such that a first film thickness of concave portions depressed between the on-chip lenses is larger than a second film thickness of top portions of the on-chip lenses, the top portions protruding in a convex shape, and

the antireflection layer comprises at least (a) a first antireflection layer provided on the upper surfaces of the on-chip lenses and (b) a second antireflection layer provided above the first antireflection layer, each of the first antireflection layer and the second antireflection layer having the low-refractive-index particles and the binder resin, and there being more low-refractive-index particles contained in the second antireflection layer than low-refractive-index particles contained in the first antireflection layer.

2. The solid-state image capture device according to claim 1 , wherein the antireflection layer contains hollow silica particles as the low-refractive-index particles.

3. The solid-state image capture device according to claim 1 , wherein the antireflection layer is provided on the upper surfaces of the on-chip lenses such that a surface of the antireflection layer becomes flat along the image capture surface of the substrate.

4. A manufacturing method for a solid-state image capture device, the method comprising the steps of:

providing a photoelectric converter in a substrate, the photoelectric converter receiving incident light at a light-receiving surface of the photoelectric converter via an image capture surface of the substrate and photoelectrically converting the incident light to thereby generate signal charge;

providing an on-chip lens above the light-receiving surface of the photoelectric converter, the on-chip lens focusing the incident light onto the light-receiving surface; and

providing an antireflection layer on an upper surface of the on-chip lens,

wherein,

the antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin,

the antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin,

the antireflection layer is formed above the light-receiving surface such that a distribution density of the low-refractive-index particles increases as a distance from the light-receiving surface increases,

the on-chip lenses are convex lenses that protrude upward in a convex shape away from the light-receiving surface and are disposed adjacent to each other so as to correspond to the photoelectric converters,

the antireflection layer is provided so as to cover upper surfaces of the on-chip lenses,

the antireflection layer is provided such that a first film thickness of concave portions depressed between the on-chip lenses is larger than a second film thickness of top portions of the on-chip lenses, the top portions protruding in a convex shape, and

the antireflection layer comprises at least (a) a first antireflection layer provided on the upper surfaces of the on-chip lenses and (b) a second antireflection layer provided above the first antireflection layer, each of the first antireflection layer and the second antireflection layer having the low-refractive-index particles and the binder resin, and there being more low-refractive-index particles contained in the second antireflection layer than low-refractive-index particles contained in the first antireflection layer.

5. A solid-state image capture device comprising:

at least one photoelectric converter provided in a substrate to receive incident light at a light-receiving surface of the photoelectric converter via an image capture surface of the substrate and photoelectrically convert the incident light to thereby generate signal charge;

at least one on-chip lens provided on the image capture surface of the substrate and above and in alignment with the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and

an antireflection layer provided on an upper surface of the on-chip lens, which upper surface faces away from the light-receiving surface;

wherein,

the antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin,

the on-chip lenses are convex lenses that protrude upward in a convex shape away from the light-receiving surface and are disposed adjacent to each other so as to correspond to the photoelectric converters, and

the antireflection layer comprises at least (a) a first antireflection layer provided on the upper surfaces of the on-chip lenses and (b) a second antireflection layer provided above the first antireflection layer, each of the first antireflection layer and the second antireflection layer having the low-refractive-index particles and the binder resin, and there being more low-refractive-index particles contained in the second antireflection layer than low-refractive-index particles contained in the first antireflection layer.

6. The solid-state image capture device according to claim 5 , wherein the antireflection layer contains hollow silica particles as the low-refractive-index particles.

7. The solid-state image capture device according to claim 5 , wherein the antireflection layer is formed above the light-receiving surface such that more low-refractive-index particles are distributed than the binder resin as a distance from the light-receiving surface increases.

8. The solid-state image capture device according to claim 5 , wherein the antireflection layer is provided on the upper surfaces of the on-chip lenses such that a surface of the antireflection layer becomes flat along the image capture surface of the substrate.

9. An electronic apparatus comprising a solid-state image capture device, the solid-state image capture device comprising:

at least one photoelectric converter provided in a substrate to receive incident light at a light-receiving surface of the photoelectric converter via an image capture surface of the substrate and photoelectrically convert the incident light to thereby generate signal charge;

at least one on-chip lens provided on the image capture surface of the substrate and above and in alignment with the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and

an antireflection layer provided on an upper surface of the on-chip lens, which upper surface faces away from the light-receiving surface;

wherein,

the antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin,

the on-chip lenses are convex lenses that protrude upward in a convex shape away from the light-receiving surface and are disposed adjacent to each other so as to correspond to the photoelectric converters, and

the antireflection layer comprises at least (a) a first antireflection layer provided on the upper surfaces of the on-chip lenses and (b) a second antireflection layer provided above the first antireflection layer, each of the first antireflection layer and the second antireflection layer having the low-refractive-index particles and the binder resin, and there being more low-refractive-index particles contained in the second antireflection layer than low-refractive-index particles contained in the first antireflection layer.