Thin film transistor array panel and fabrication
View Patent ↗The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
1. A manufacturing method of a thin film transistor array panel comprising:
forming a gate line on a substrate;
forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line;
forming a plurality of conducting films on the ohmic contact, wherein the plurality of conducting films comprises a first conducting film and a second conducting film, the second conducting film is disposed between the first conducting film and the ohmic contact, and the first conducting film has a better contact characteristic with at least one of ITO and IZO than the second conducting film;
forming a first photoresist pattern on the plurality of conducting films;
etching the plurality of conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask;
removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern;
etching the plurality of conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and
etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
2. The method of claim 1 , wherein the flow ratio of the Cl-containing gas and the F-containing gas is 1:1 to 1:13.
3. The method of claim 2 , wherein the Cl-containing gas is at least one selected from Cl 2 , HCl, CCl 4 , BCl 3 , and SiCl 2 H 2 .
4. The method of claim 2 , wherein the F-containing gas is SF 6 or CF 4 .
5. The method of claim 2 , wherein the Cl-containing gas is HCl and a flow ratio of the HCl gas and the F-containing gas is 1:4 to 1:13.
6. The method of claim 1 , wherein the etching of the exposed ohmic contact is performed under a pressure of 100 to 800 mT.
7. The method of claim 1 , wherein the first photoresist pattern comprises a first portion and a second portion having a thickness greater than that of the first portion.
8. The method of claim 7 , wherein the formation of the second photoresist pattern comprises removing the second portion.
9. The method of claim 1 , wherein the etching of the plurality of conducting films is performed by wet etching.
10. The method of claim 1 , wherein the first conducting film includes Mo or Mo alloy, and the second conducting film includes Al or Al alloy.
11. The method of claim 10 , wherein the plurality of conducting films further comprises a third conducting film including Mo or Mo alloy.
12. The method of claim 10 , wherein the flow ratio of the Cl-containing gas and the F-containing gas is 1:1 to 1:13.
13. The method of claim 12 , wherein the Cl-containing gas is at least one selected from Cl 2 , HCl, CCl 4 , BCl 3 , and SiCl 2 H 2 .
14. The method of claim 12 , wherein the F-containing gas is SF 6 or CF 4 .
15. The method of claim 12 , wherein the Cl-containing gas is HCl and a flow ratio of the HCl gas and the F-containing gas is 1:4 to 1:13.
16. The method of claim 10 , wherein the etching of the exposed ohmic contact is performed under a pressure of 100 to 800 mT.
17. The method of claim 10 , wherein the first photoresist pattern comprises a first portion and a second portion having a thickness greater than that of the first portion.
18. The method of claim 17 , wherein the formation of the second photoresist pattern comprises removing the second portion.
19. The method of claim 10 , wherein the etching of the plurality of conducting films is performed by wet etching.
20. The method of claim 1 , wherein the plurality of conducting films further comprises a third conducting film that includes Mo or a Mo alloy, and the second conducting film is disposed between the first conducting film and the third conducting film.