Treatment of thin film layers photovoltaic module manufacture
View Patent ↗Systems and processes for treatment of a cadmium telluride thin film photovoltaic device are generally provided. The systems can include a treatment system and a conveyor system. The treatment system includes a preheating section, a treatment chamber, and an anneal oven that are integrally interconnected within the treatment system. The conveyor system is operably disposed within the treatment system and configured for transporting substrates in a serial arrangement into and through the preheat section, into and through the treatment chamber, and into and through the anneal oven at a controlled speed. The treatment chamber is configured for applying a material to a thin film on a surface of the substrate and the anneal oven is configured to heat the substrate to an annealing temperature as the substrates are continuously conveyed by the conveyor system through the treatment chamber.
1. A process for treatment of a cadmium telluride thin film photovoltaic device, the process comprising:
introducing substrates individually into a preheat chamber;
heating the substrates within the preheat chamber to a treatment temperature;
conveying the substrates in serial arrangement into a treatment chamber that is integrally interconnected to the preheat chamber;
applying a liquid treatment composition to a surface of the substrates;
conveying the substrates in serial arrangement into an anneal oven that is integrally interconnected to the treatment chamber; and,
annealing the substrates at an anneal temperature from about 250° C. to about 500° C. such that a thin film on the substrates is doped with material from the liquid treatment composition.
2. The process as in claim 1 , wherein the liquid treatment composition comprises copper.
3. The process as in claim 1 , wherein the liquid treatment composition comprises cadmium chloride.
4. The process as in claim 1 , further comprising:
conveying the substrates in serial arrangement into a cooling chamber; and,
cooling the substrates to room temperature.
5. The process as in claim 1 , wherein the substrates convey through the treatment chamber at a substantially constant linear rate.
6. The process as in claim 1 , wherein the liquid treatment composition is sprayed onto the surface of the substrate.
7. The process as in claim 1 , wherein the liquid treatment composition is applied using an applicator roll configured to apply a liquid to the surface of the substrates.
8. The process as in claim 1 , wherein the substrates are conveyed via a conveyor system that comprises a single conveyor belt that traverses through the treatment chamber.
9. The process as in claim 8 , further comprising:
cleaning the conveyor belt with a cleaning system.
10. The process as in claim 9 , wherein the cleaning system comprises a cleaning tank positioned such that the single conveyor belt passes through the cleaning tank on a return path.
11. The process as in claim 1 , wherein the treatment chamber is defined within an individual module, and wherein the substrates are conveyed through the treatment chamber via an independent conveyor that comprises a conveyor belt and a cleaning system configured to clean the conveyor belt.
12. The process as in claim 1 , wherein the substrates are conveyed through the treatment chamber.
13. A process for forming a cadmium telluride thin film photovoltaic device, the process comprising:
forming cadmium sulfide layers on a plurality of substrates;
forming cadmium telluride layers on the cadmium sulfide layers;
thereafter, introducing the substrates individually into a preheat chamber;
heating the substrates within the preheat chamber to a treatment temperature;
conveying the substrates in serial arrangement into a treatment chamber that is integrally interconnected to the preheat chamber;
spraying a liquid treatment composition onto a surface of the substrates, wherein the liquid treatment composition comprises cadmium chloride;
conveying the substrates in serial arrangement into an anneal oven that is integrally interconnected to the treatment chamber; and,
annealing the substrates at an anneal temperature from about 250° C. to about 500° C. such that a thin film on the substrates is doped with chlorine ions from the liquid treatment composition.
14. The process as in claim 13 , wherein the substrates are conveyed through the treatment chamber.