METHOD AND SYSTEM FOR CLOSE PROXIMITY CATALYSIS FOR CARBON NANOTUBE SYNTHESIS
A method for carbon nanotube synthesis can include providing in a growth chamber, a substrate in close proximity with a surface of a first plate having a catalyst. The method can also include heating the growth chamber to a temperature sufficient to cause transfer of catalytic particles from the first plate to the substrate. The method can also include growing carbon nanotubes on the substrate by directing feed gas to the substrate.
1 . A method for carbon nanotube synthesis comprising:
providing in a growth chamber, a substrate in close proximity with a surface of a first plate comprising a catalyst;
heating the growth chamber to a temperature sufficient to cause transfer of catalytic particles from the first plate to the substrate; and
growing carbon nanotubes on the substrate by directing feed gas to the substrate.
2 . The method of claim 1 , comprising a second plate; wherein the substrate is disposed between the first plate and the second plate.
3 . The method of claim 2 , wherein the second plate comprises a catalyst.
4 . The method of claim 1 , wherein the plate is roughened prior to heating.
5 . The method of claim 4 , comprising roughening the plate prior to heating.
6 . The method of claim 1 , comprising, prior to heating, ensuring that the growth chamber comprises an inert environment.
7 . The method of claim 1 , wherein the catalyst comprises a transition metal.
8 . The method of claim 7 , wherein the metal comprises copper.
9 . A system for carbon nanotube synthesis, comprising:
a growth chamber;
a heater configured to heat the growth chamber;
a first plate comprising a catalyst, wherein the first plate is configured to fit within the growth chamber, and wherein a surface of the first plate faces a substrate; and
a substrate configured to fit in close proximity with the surface of the first plate.
10 . The system of claim 9 , comprising a second plate, wherein the second plate is configured to fit within the growth chamber, wherein the surface of the first plate faces a surface of the second plate, and wherein the substrate is configured to fit between the first and second plates, and in close proximity with the surface of the second plate.
11 . The system of claim 10 , wherein the second plate comprises a catalyst.
12 . The system of claim 9 , wherein the growth chamber is configured to accept an inert gas.
13 . The system of claim 12 , comprising an inert gas source in communication with the growth chamber.
14 . The system of claim 9 , wherein the growth chamber is configured to accept a feed gas.
15 . The system of claim 14 , wherein the feed gas comprises acetylene.
16 . The system of claim 9 , wherein the catalyst comprises a transition metal.
17 . The system of claim 9 , wherein the surface the plate is roughened.
18 . The system of claim 9 , wherein the close proximity comprises surface engagement.
19 . The system of claim 9 , wherein the catalyst comprises copper.
20 . The system of claim 9 , wherein the catalyst is selected from the group consisting of iron, nickel, cobalt, molybdenum, and an alloy thereof.