Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
Methods for manufacturing three-dimensional thin-film solar cells using a template. The template comprises a template substrate comprising a plurality of three-dimensional surface features. The three-dimensional thin-film solar cell substrate is formed by forming a sacrificial layer on the template, subsequently depositing a semiconductor layer, selectively etching the sacrificial layer, and releasing the semiconductor layer from the template. Select portions of the three-dimensional thin-film solar cell substrate are then doped with a first dopant, while other select portions are doped with a second dopant. Next, selective emitter and base metallization regions are formed using a PECVD shadow mask process.
1 . A method for manufacturing a three-dimensional thin-film solar cell, comprising:
forming a three-dimensional thin-film solar cell substrate by the steps of:
forming a sacrificial layer on a template, said template comprising a template substrate, said template substrate comprising a plurality of three-dimensional surface features;
subsequently depositing a semiconductor layer;
selectively etching said sacrificial layer; and
releasing said semiconductor layer from said template;
doping select portions of said three-dimensional thin-film solar cell substrate with a first dopant;
doping select portions of said three-dimensional thin-film solar cell substrate with a second dopant; and
forming selective emitter metallization regions and selective base metallization regions using a PECVD shadow mask process.
2 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said step of forming selective emitter metallization regions and selective base metallization regions using a shadow mask process comprises:
positioning a shadow mask proximate said three-dimensional thin-film solar cell substrate wherein said shadow mask blocks patterned surface regions of said three-dimensional thin-film solar cell substrate; and
selectively depositing a layer of dielectric material on unblocked surface regions of said three-dimensional thin-film solar cell substrate.
3 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said step of forming selective emitter metallization regions and selective base metallization regions using a shadow mask process comprises:
positioning a shadow mask proximate said three-dimensional thin-film solar cell substrate wherein said shadow mask blocks patterned surface regions of said three-dimensional thin-film solar cell substrate; and
selectively etching material in said blocked patterned surface regions leaving a dielectric hard masking layer on unblocked surface regions of said three-dimensional thin-film solar cell substrate.
4 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said dielectric material is silicon nitride.
5 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said shadow mask comprises patterns with dimensions in the range of 50 to 500 micrometers.
6 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said dielectric material is an undoped silicon oxide.
7 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said dielectric material is silicon oxide doped with phosphorus, boron, germanium, gallium, or arsenic.
8 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said dielectric material is aluminum oxide.
9 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said dielectric material is undoped amorphous silicon.
10 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said dielectric material is amorphous silicon doped with phosphorus, boron, germanium, gallium, or arsenic.
11 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said three-dimensional surface features comprise a plurality of posts and a plurality of trenches interspersed among said plurality of posts.
12 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said step of forming a three-dimensional thin-film solar cell substrate comprises forming a three-dimensional thin-film solar cell substrate with a plurality of single-aperture unit cells.
13 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said step of forming a three-dimensional thin-film solar cell substrate comprises forming a three-dimensional thin-film solar cell substrate with a plurality of dual-aperture unit cells.
14 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said shadow mask is a quartz shadow mask.
15 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said shadow mask is a silicon carbide or silicon carbide coated shadow mask.
16 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said shadow mask is an alumina shadow mask.
17 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said shadow mask is a ceramic glass shadow mask.
18 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , wherein said sacrificial layer comprises a porous silicon layer.
19 . The method for manufacturing a three-dimensional thin-film solar cell of claim 1 , further comprising mounting the three-dimensional thin-film solar cell on a rear mirror.
20 . A method for manufacturing a three-dimensional thin-film solar cell, comprising:
forming a three-dimensional thin-film solar cell substrate by the steps of:
forming a sacrificial layer on a template;
subsequently depositing a semiconductor layer; and
releasing said semiconductor layer from said template;
doping select portions of said three-dimensional thin-film solar cell substrate with dopants; and
forming metallization regions by positioning a shadow mask structure proximate said semiconductor layer wherein said shadow mask masks surface regions of said semiconductor layer, and selectively depositing a dielectric material on unmasked surface regions of said semiconductor layer.