Dielectric composition for thin-film transistors
View Patent ↗An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition includes a dielectric material, a crosslinking agent, and an infrared absorbing agent. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric polymer. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases. The infrared absorbing agent allows the dielectric composition to attain a temperature that is significantly greater than the temperature attained by the substrate during curing. This difference in temperature allows the dielectric layer to be cured at relatively high temperatures and/or shorter time periods, permitting the selection of lower-cost substrate materials that would otherwise be deformed by the curing of the dielectric layer.
1. An electronic device comprising a dielectric layer, the dielectric layer comprising a crosslinked dielectric material and an infrared absorbing agent,
wherein the dielectric material comprises a lower-k dielectric polymer and a higher-k dielectric polymer, and wherein the dielectric composition further comprises a liquid in which both the lower-k dielectric polymer and the higher-k dielectric polymer are miscible, and
wherein the infrared absorbing agent is a polymethine, phthalocyanine, naphthalocyanine, aminium salt, or a dithiolene metal complex.
2. A dielectric composition comprising a dielectric material, a crosslinking agent, and an infrared absorbing agent,
wherein the dielectric material comprises a lower-k dielectric polymer and a hiqher-k dielectric polymer, and wherein the dielectric composition further comprises a liquid in which both the lower-k dielectric polymer and the hiqher-k dielectric polymer are miscible, and
wherein the infrared absorbing agent is a polymethine, phthalocyanine, naphthalocyanine, aminium salt, or a dithiolene metal complex.
3. The dielectric composition of claim 2 , wherein the lower-k dielectric polymer is poly(methyl silsesquioxane), and the higher-k dielectric polymer is poly(4-vinyl phenol).
4. The dielectric composition of claim 2 , wherein the infrared absorbing agent has an absorption maximum of from about 800 nm to about 1400 nm, and wherein the infrared absorbing agent is present in the amount of from about 0.001 to about 5 wt %, based on the weight of the dielectric composition.