Organic transistor, method for producing organic transistor, electro-optical device, and electronic equipment
View Patent ↗An organic transistor includes: a source electrode, a drain electrode, an organic semiconductor film provided between the source electrode and the drain electrode, a gate electrode, and a gate dielectric film provided between the organic semiconductor film and the gate electrode, the gate dielectric film including a first gate dielectric film in contact with the gate electrode and a second gate dielectric film in contact with the organic semiconductor film, the second gate dielectric film having a hydrocarbon compound containing carbon and hydrogen atoms.
1. An organic transistor comprising:
a source electrode;
a drain electrode;
an organic semiconductor film provided between the source electrode and the drain electrode;
a gate electrode; and
a gate dielectric film provided between the organic semiconductor film and the gate electrode, the gate dielectric film including a first gate dielectric film in contact with the gate electrode and a second gate dielectric film in contact with the organic semiconductor film, the second gate dielectric film having a hydrocarbon compound containing carbon and hydrogen atoms, wherein
the second gate dielectric film does not contain any fluorine atoms.
2. The organic transistor according to claim 1 , the second gate dielectric film being provided between the source electrode and the drain electrode in a plane view.
3. The organic transistor according to claim 1 , the second gate dielectric film being provided to at least cover a top surface of the organic semiconductor film facing the gate electrode.
4. The organic transistor according to claim 3 , the second gate dielectric film being provided to cover the top surface of the organic semiconductor film facing the gate electrode and a side surface of the organic semiconductor film continuous to the top surface.
5. The organic transistor according to claim 1 , the organic transistor having a top-gate structure, and the first gate dielectric film having a fluorine-atom-containing organic compound.
6. The organic transistor according to claim 5 , the fluorine-atom-containing organic compound including a carbocyclic hydrocarbon compound having fluorine atoms evenly bonded to the carbocyclic side chains thereof.
7. The organic transistor according to claim 1 , the organic transistor having a bottom-gate structure, and the first gate dielectric film having an inorganic compound or a fluorine-atom-containing organic compound.
8. The organic transistor according to claim 1 , the first gate dielectric film having a thickness greater than a thickness of the second gate dielectric film.
9. The organic transistor according to claim 8 , the second gate dielectric film having a thickness of 5 nm to 500 nm.
10. The organic transistor according to claim 1 , the second gate dielectric film being formed of a hydrocarbon compound having a carbon number of 30 or more.
11. An electro-optical device comprising:
a substrate;
the organic transistor according to claim 1 provided on the substrate;
a pixel electrode electrically connected to the organic transistor; and
an electro-optical material provided on the pixel electrode.
12. Electronic equipment comprising the electro-optical device according to claim 11 .
13. A method for producing an organic transistor comprising:
forming a source electrode and a drain electrode on a substrate;
forming an organic semiconductor film between the source electrode and the drain electrode;
forming a second gate dielectric film on the organic semiconductor film, the second gate dielectric film having a hydrocarbon compound containing carbon and hydrogen atoms;
forming a first gate dielectric film on the second gate dielectric film, the first gate dielectric film having a fluorine-atom-containing organic compound; and
forming a gate electrode on the first gate dielectric film, wherein
the second gate dielectric film does not contain any fluorine atoms.
14. The method for producing an organic transistor according to claim 13 , the forming of the organic semiconductor film being performed using a liquid-phase process that uses a fluid substance containing a material for forming the organic semiconductor film.
15. The method for producing an organic transistor according to claim 13 , the forming of the gate electrode being performed using a liquid-phase process that uses a fluid material for forming an electrode, the fluid material being a dispersion of an electrically conductive polymer or metal particles in an aqueous dispersion medium.
16. A method for producing an organic transistor comprising:
forming a gate electrode on a substrate;
forming a first gate dielectric film to cover the gate electrode, the first gate dielectric film having an inorganic compound or a fluorine-atom-containing organic compound;
forming a second gate dielectric film on the first gate dielectric film, the second gate dielectric film having a hydrocarbon compound containing carbon and hydrogen atoms;
forming a source electrode and a drain electrode on the second gate dielectric film; and
forming an organic semiconductor film between the source electrode and the drain electrode, wherein
the second gate dielectric film does not contain any fluorine atoms.