Light-emitting device
View Patent ↗The application illustrates a light-emitting device including a contact layer and a current spreading layer on the contact layer. A part of the contact layer is a rough structure and a part of the contact layer is a flat structure. A part of the current spreading layer is a rough structure and a part of the current spreading layer is a flat structure. The rough region of the contact layer and the rough region of the current spreading layer are substantially overlapped.
1. A light-emitting device comprising:
a semiconductor structure;
a contact layer on the semiconductor structure, including:
a rough region having a top surface and sidewalls;
a flat region having a top surface and sidewalls;
wherein the top surface of the rough region is a rough surface, and the top surface of the flat region is a flat surface; and
a current spreading layer on the contact layer, including a rough region and a flat region; the rough region of the contact layer is substantially directly under the rough region of the current spreading layer; the flat region of the contact layer is substantially directly under the flat region of the current spreading layer.
2. The light-emitting device according to claim 1 , wherein the material of the semiconductor structure comprising one or more elements selected from the group consisting of gallium, aluminum, indium, arsenic, phosphorous, nitrogen, and silicon.
3. The light-emitting device according to claim 1 , wherein the semiconductor structure further including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.
4. The light-emitting device according to claim 1 , wherein the contact layer further including:
a flat contact layer on the semiconductor structure; and
a rough contact layer on the flat contact layer, comprising the rough region and the flat region.
5. The light-emitting device according to claim 4 , wherein the flat region of the rough contact layer comprising a patterned photoresist layer.
6. The light-emitting device according to claim 5 , wherein the patterned photoresist layer can be oxide or nitride.
7. The light-emitting device according to claim 1 , wherein the current spreading layer can be indium tin oxide, indium oxide, tin oxide, cadmium tin oxide, zinc oxide, magnesium oxide, or titanium nitride.
8. The light-emitting device according to claim 1 , further comprising a substrate below the semiconductor structure.
9. The light-emitting device according to claim 8 , wherein the substrate can be GaAs, Si, SiC, Sapphire, InP, GaP, MN, or GaN.
10. The light-emitting device according to claim 1 , wherein the morphology of the current spreading layer and the morphology of the contact layer are substantially the same.
11. The light-emitting device according to claim 1 , wherein the current spreading layer is a partially rough layer.