IP Library Granted Patent US 8,432,010
Granted Patent B2
US 8,432,010 · App. 12/769,799 · Granted Apr 30, 2013

Solid-state image pickup device, method of manufacturing solid-state image pickup device, and electronic apparatus

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Quick Facts
Patent No.
US 8,432,010
App. No.
12/769,799
Granted
Apr 30, 2013
Kind
B2
Abstract

Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.

Claims (23)

1. A solid-state image pickup device comprising:

a solid-state image pickup element operable to produce an electric charge according to the amount of light received;

a lens disposed on an upper side of a pixel of the solid-state image pickup element;

a protective film which covers an upper side of the lens and a surface of which is flattened;

a surface film which is formed at the surface of the protective film and is higher in hydrophilicity than an inside of the protective film; and

a transparent substrate above the surface film,

wherein,

an air layer is formed between the surface film and the transparent substrate,

the protective film comprises a fluorine-containing silane compound, and

the surface film is lower in fluorine content than the inside of the protective film.

2. The solid-state image pickup device according to claim 1 , wherein the surface film is a film formed by subjecting the surface of the protective film to a plasma treatment using an oxygen-containing gas.

3. The solid-state image pickup device according to claim 1 , wherein the thickness of the protective layer is from 0.1 μm to 1 μm.

4. The solid-state image pickup device according to claim 3 , wherein the thickness of the protective layer is 0.4 μm.

5. A method of manufacturing a solid-state image pickup device, comprising the steps of:

forming a lens on an upper side of a pixel of a solid-state image pickup element;

covering the lens with a protective film and flattening a surface of the protective film;

forming at the surface of the protective film a surface film which is higher in hydrophilicity than an inside of the protective film; and

forming a transparent substrate above the surface film,

wherein,

an air layer is formed between the surface film and the transparent substrate,

the protective film comprises a fluorine-containing silane compound, and

the surface film is lower in fluorine content than the inside of the protective film.

6. The method according to claim 5 , wherein the surface film is formed by subjecting the surface of the protective film to a plasma treatment using an oxygen-containing gas.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 19, 2016
From: SONY CORPORATION
To: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
Reel/Frame 040419/0001 →