Light emitting device with trenches and a top contact
View Patent ↗A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A bottom contact disposed on a bottom surface of the semiconductor structure is electrically connected to one of the n-type region and the p-type region. A top contact disposed on a top surface of the semiconductor structure is electrically connected to the other of the n-type region and the p-type region. A mirror is aligned with the top contact. The mirror includes a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
1. A device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
a bottom contact disposed on a bottom surface of the semiconductor structure, wherein the bottom contact is electrically connected to one of the n-type region and the p-type region;
a top contact disposed on a top surface of the semiconductor structure, wherein the top contact is electrically connected to the other of the n-type region and the p-type region; and
a mirror disposed directly beneath a top contact, the mirror comprising a trench formed in the semiconductor structure and a reflective material disposed in the trench, wherein the trench extends through the light emitting layer.
2. The device of claim 1 wherein the top contact comprises a bonding pad connected to a plurality of connected contact arms.
3. The device of claim 2 wherein the trench is aligned with and disposed beneath the plurality of connected contact arms and at a given point a bottom of the trench is substantially the same width as the contact arm overlying the trench at the given point.
4. The device of claim 2 wherein the trench is aligned with at least a portion of an edge of the bonding pad.
5. The device of claim 4 wherein in an area adjacent to a portion of the trench that is aligned with at least a portion of an edge of the bonding pad, an insulating layer is disposed between the bottom contact and the light emitting layer such that no current is injected in a portion of the light emitting layer beneath the bonding pad.
6. The device of claim 2 wherein the trench surrounds the bonding pad.
7. The device of claim 1 wherein the light emitting layer is a III-nitride material.
8. The device of claim 1 wherein the light emitting layer is AlInGaP.
9. The device of claim 1 further comprising a dielectric layer disposed between the trench and the reflective material, wherein the reflective material is electrically isolated from the semiconductor structure in the trench by the dielectric layer.
10. The device of claim 1 further comprising a variation in index of refraction in a direction parallel to a top surface of the semiconductor structure, wherein the variation in index of refraction is disposed within the semiconductor structure or on a surface of the semiconductor structure.
11. The device of claim 4 wherein a portion of the trench disposed directly beneath a contact arm is wider than a portion of the trench aligned with at least a portion of an edge of the bonding pad.
12. The device of claim 1 wherein at least one sidewall of the trench is angled 30° to 60° relative to a normal to the top surface of the semiconductor structure.