Container for a display device, method of manufacturing the same, and display device including the container

1. A container for a display device, the container comprising:

an inner layer including carbon of about 0.001 wt % to about 0.1 wt %, silicon of about 0.002 wt % to about 0.05 wt %, manganese of about 0.3 wt % to about 2 wt %, impurities of about 0.08 wt % to about 0.29 wt % based on a total weight of the inner layer and a remainder of iron;

a plating layer formed on the inner layer and including electric zinc; and

a polymer chrome-free layer formed on the plating layer.

2. The container of claim 1 , wherein the plating layer is plated in a deposit amount of about 10 g/m 2 to about 30 g/m 2 .

3. The container of claim 1 , wherein the polymer chrome-free layer comprises an amine-based of about 10 wt % to about 30 wt %, a silica mixture of about 10 wt % to about 50 wt %, an inorganic sol of about 1 w % to about 10 wt % based on a total weight of the polymer chrome-free layer and a remainder of an epoxy resin as a binder resin.

4. The container of claim 3 , wherein the silica mixture comprises a silica compound including at least one selected from the group consisting of a colloidal silica and fumed silica, and a silane compound including at least one selected from the group consisting of glycidoxypropylethoxysilane aminopropyl ethoxysilane, aminopropyl ethoxysilane and methoxyoxypropyl trimethoxysilane.

5. The container of claim 4 , wherein the silica compound and the silane compound are mixed in a weight ratio of about 1:0.2 to about 1:0.8.

6. The container of claim 3 , wherein the inorganic sol comprises at least one selected from the group consisting of zirconiasol, aluminasol, and titansol.

7. The container of claim 1 , wherein the polymer chrome free layer is coated in a deposit amount of about 0.8 g/m 2 to about 1.3 g/m 2 .

8. The container of claim 1 , wherein the impurities comprises phosphorous (P) of about 0 wt % to about 0.1 wt %, sulfur (S) of about 0 wt % to about 0.008 wt %, chromium (Cr) of about 0.01 wt % to about 0.03 wt %, nickel (Ni) of about 0.007 wt % to about 0.015 wt %, molybdenum (Mo) of about 0.001 wt % to about 0.004 wt %, aluminum (Al) of about 0.043 wt % to about 0.045 wt %, copper (Cu) of about 0.02 wt % to about 0.04 wt %, tin (Sn) of about 0.0017 wt % to about 0.0018 wt %, oxygen (O) of about 0 wt % to about 0.004 wt %, and nitrogen (N) in of about 0 wt % to about 0.003 wt % based on a total weight of the impurities.

9. The container of claim 8 , wherein the impurities further comprises niobium (Nb) of about 0.0075 wt % to about 0.0083 wt % and titanium (Ti) of about 0.0306 wt % to about 0.0310 wt % based on the total weight of the impurities.

10. The container of claim 1 , wherein a total thickness of the inner layer, the plating layer and the polymer chrome-free layer is in a range of about 0.5 mm to about 0.9 mm.

11. A method of manufacturing a container for a display device, the method comprising:

forming a plating layer on an inner layer including carbon of about 0.001 wt % to about 0.1 wt %, silicon of about 0.002 wt % to about 0.05 wt %, manganese of about 0.3 wt % to about 2 wt %, impurities of about 0.08 wt % to about 0.29 wt % based on a total weight of the inner layer and a remainder of iron; and

forming a polymer chrome-free layer on the plating layer formed on the inner layer.

12. The method of claim 11 , wherein the polymer chrome-free layer is formed by coating a composition including an amine-based resin of about 10 wt % to about 30 wt %, a silica mixture of about 10 wt % of about 50 wt %, an inorganic sol of about 1 w % to about 10 wt % based on a total weight of the polymer chrome-free layer and a remainder of an epoxy resin as a binder resin on the plating layer.

13. The method of claim 11 , wherein the plating layer is formed in a sulfuric acid soak.

14. The method of claim 11 , wherein the polymer chrome-free layer is formed by one coating and one baking type process.

15. The method of claim 11 , wherein forming the polymer chrome-free layer further comprises:

baking the polymer chrome-free layer at a temperature of about 140° C. to about 220° C.

16. A display device comprising:

a panel unit including a first substrate having a thin-film transistor controlling a pixel and a second substrate facing the first substrate;

a backlight unit generating light and providing the light to the panel unit;

a bottom chassis receiving the backlight unit and including an inner layer, a plating layer and a polymer chrome-free layer, the inner layer including carbon of about 0.001 wt % to about 0.1 wt %, silicon of about 0.002 wt % to about 0.05 wt %, manganese of about 0.3 wt % to about 2 wt %, impurities of about 0.08 wt % to about 0.29 wt % based on a total weight of the inner layer and a remainder of iron, the plating layer being formed on the inner layer and including electric zinc, the polymer chrome-free layer being formed on the plating layer; and

a top chassis combined with the bottom chassis to fix the panel unit to the backlight unit.

17. The display device of claim 16 , wherein the plating layer is plated in a deposit amount of about 10 g/m 2 to about 30 g/m 2 .

18. The display device of claim 16 , wherein the polymer chrome-free layer comprises an amine-based resin of about 10 wt % to about 30 wt %, a silica mixture of about 10 wt % of about 50 wt %, an inorganic sol of about 1 w % to about 10 wt % based on a total weight of the polymer chrome-free layer and a remainder of an epoxy resin as a binder resin.

19. The display device of claim 16 , wherein the polymer chrome-free layer is coated in a deposit amount of about 0.8 g/m 2 to about 1.3 g/m 2 .

20. The display device of claim 16 , wherein the bottom chassis is electrically connected to a light source of the backlight unit.