Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device and a manufacturing method thereof are provided for the improvement of the reliability of copper damascene wiring in which a film between wiring layers and a film between via layers are comprised of an SiOC film with low dielectric constant. A film between wiring layers, a film between wiring layers, and a film between via layers are respectively comprised of an SiOC film, and stopper insulating films and a cap insulating film are comprised of a laminated film of an SiCN film A and an SiC film B. By doing so, it becomes possible to reduce the leakage current of the film between wiring layers, the film between wiring layers, and the film between via layers, and also possible to improve the adhesion of the film between wiring layers, the film between wiring layers, and the film between via layers to the stopper insulating films and the cap insulating film.
1. A method of manufacturing a semiconductor device, comprising:
(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first trench in the first insulating film;
(c) embedding a first metal into the first trench;
(d) forming a second insulating film over the first metal and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films; and
(h) embedding a second metal into the contact hole,
wherein the first insulating film comprises a first film and a second film formed on the first film,
wherein the fourth insulating film has a thickness greater than thicknesses of the second and third insulating films,
wherein the first metal and the second metal are composed of copper as a primary component,
wherein the second insulating film is composed of a material including silicon, carbon and nitrogen,
wherein the third insulating film is composed of a material including silicon and carbon,
wherein the fourth insulating film is composed of a material including silicon, oxygen and carbon and has a dielectric constant lower than a dielectric constant of a silicon oxide film, and
wherein a concentration of nitrogen in the second insulating film is higher than a concentration of nitrogen in the third insulating film.
2. A method of manufacturing a semiconductor device according to claim 1 ,
wherein the first film is composed of a material including silicon, oxygen and carbon, and
wherein the second film is composed of a material including silicon, oxygen and nitrogen.
3. A method of manufacturing a semiconductor device according to claim 2 ,
wherein the second film is formed directly between the second insulating film and the first film.
4. A method of manufacturing a semiconductor device according to claim 2 ,
wherein the second film has a nitrogen content of 3 to 4 atoms % or less.
5. A method of manufacturing a semiconductor device according to claim 4 ,
wherein the second film has a diffraction ratio of 1.485 or less.