Solid state image device having multiple PN junctions in a depth direction, each of which provides an output signal
View Patent ↗A solid-state image device is provided which has a semiconductor substrate, pixels A each containing a photoelectric conversion portion in which at least two PN junction parts are provide in a depth direction of the semiconductor substrate, pixels B each containing a photoelectric conversion portion in which at least one PN junction part is provided, first color filters provided above the pixels A, second color filters provided above the pixels B; and a detection mechanism for detecting a first color signal and a second color signal from the two PN junction parts of each of the pixels A and a third color signal from the PN junction part of each of the pixels B. According to the above solid-state image device, light can be more efficiently used than a color filter separation method, and superior color reproducibility to that of a three-well structure can be realized.
1. A method of manufacturing a solid-state image device, the method comprising:
configuring a first pixel to obtain blue and red signals from blue and red wavelengths of light, a magenta filter being positioned to transfer said blue and red wavelengths onto said first pixel;
configuring a second pixel to obtain two different green signals from green wavelengths
forming a bulk structure having different underlayers, wherein under one green filter, two different green signals are obtained; configuring a matrix in which one line of the first pixel (Blue/Red) in a longitudinal direction and two lines of the second pixels (Green) in a longitudinal direction are alternately disposed; and two green pixels are arranged in a three-line pattern of RGB colors, wherein the first green pixel is used as a brightness signal and the second green pixel is synthesized with signals of the first pixel to increase sensitivity.
2. The method according to claim 1 , wherein said first pixel has a photosensitivity to wavelengths of blue light and wavelengths of red light.
3. The method according to claim 1 , wherein said second pixel has a photosensitivity to wavelengths of green light.
4. The method according to claim 1 , wherein a segment of a P-well region is between said first pixel and said second pixel.
5. The method according to claim 4 , wherein an N-layer of the first pixel is between a P-layer of the first pixel and a first portion of the P-well region, a different N-layer of the first pixel being between said P-layer of the first pixel and said magenta filter.
6. The method according to claim 5 , wherein a blue color signal PN junction is between said P-layer of the first pixel and said N-layer of the first pixel, a red color signal PN junction being between a first portion of the P-well region and said different N-layer of the first pixel.
7. The method according to claim 6 , wherein said blue color signal PN junction is configured to generate a blue signal charge from said blue wavelengths, said red color signal PN junction being configured to generate a red signal charge from said red wavelengths.
8. The method according to claim 5 , wherein an N-layer of the second pixel is between a P-layer of the second pixel and a second portion of the P-well region, a different N-layer of the second pixel being between said P-layer of the second pixel and said green filter.
9. The method according to claim 8 , wherein said green filter is between said N-layer of the first pixel and a first micro lens, said magenta filter being between said N-layer of the second pixel and a second micro lens.
10. The method according to claim 8 , wherein a PN junction between said first portion of the P-well region and said N-layer of the first pixel and a PN junction between said second portion of the P-well region and said N-layer of the second pixel formed are at the same depth.
11. The method according to claim 8 , wherein a PN junction between said P-layer of the first pixel and said N-layer of the first pixel and a PN junction between said P-layer of the second pixel and said N-layer of the second pixel are formed at the same depth.
12. The method according to claim 8 , wherein a PN junction between said P-layer of the first pixel and said different N-layer of the first pixel and a PN junction between said P-layer of the second pixel and said different N-layer of the second pixel are formed at the same depth.
13. The method according to claim 1 , further comprising:
configuring a third pixel to obtain at least one green signal from said green wavelengths, a different green filter being positioned to transfer said green wavelengths onto said third pixel.
14. The method according to claim 13 , wherein said magenta filter is between said green filter and said different green filter.
15. The method according to claim 13 , wherein said green filter is between said magenta filter and said different green filter.
16. The method according to claim 1 , wherein said magenta filter is between two magenta filters.
17. The method according to claim 1 , wherein said green filter is between two green filters.
18. The method according to claim 1 , wherein said two different green signals produce a single green signal.
19. The method according to claim 1 , wherein said two different green signals produce a color signal and a brightness signal.
20. The method according to claim 1 , wherein one of the two different green signals is obtained from a range of the green wavelengths, a different one of the two different green signals being obtained from a different range of the green wavelengths.