Bidirectional switch module
View Patent ↗A first semiconductor element having a junction electrode to be connected to a first node of a bidirectional switch circuit is mounted on a first metal base plate to be a heat dissipation plate, and a second semiconductor element having a junction electrode to be connected to a second node of the bidirectional switch circuit is mounted on a second metal base plate to be a heat dissipation plate. The junction electrode of the first semiconductor element has the same potential as that of the first metal base plate, and the junction electrode of the second semiconductor element has the same potential as that of the second metal base plate. Also, the respective metal base plates and non-junction electrodes of the respective semiconductor elements are connected by metal thin wires, respectively, thereby configuring the bidirectional switch circuit.
1. A bidirectional switch module including a bidirectional switch circuit in which a plurality of semiconductor elements are combined and in which a current can flow bidirectionally from a first terminal to a second terminal and from the second terminal to the first terminal, the bidirectional switch module comprising:
a first metal base plate serving as a heat dissipation plate and connected to the first terminal;
a second metal base plate serving as a heat dissipation plate and connected to the second terminal;
a first semiconductor switch element provided on a first semiconductor chip having a pair of surfaces, including a first electrode provided on one surface of the first semiconductor chip and connected to the first terminal, a second electrode provided on other surface of the first semiconductor chip and serving as a current path to the first electrode, and a third electrode provided on the other surface of the first semiconductor chip and controlling a current between the first electrode and the second electrode, and mounted on the first metal base plate so that the first electrode and the first metal base plate face each other;
a first diode element provided on a second semiconductor chip having a pair of surfaces, including a first cathode electrode provided on one surface of the second semiconductor chip and connected to the first terminal, and a first anode electrode provided on other surface of the second semiconductor chip, and mounted on the first metal base plate so that the first cathode electrode and the first metal base plate face each other;
a second semiconductor switch element provided on a third semiconductor chip having a pair of surfaces, including a fourth electrode provided on one surface of the third semiconductor chip and connected to the second terminal, a fifth electrode provided on other surface of the third semiconductor chip and serving as a current path to the fourth electrode, and a sixth electrode provided on the other surface of the third semiconductor chip and controlling a current between the fourth electrode and the fifth electrode, and mounted on the second metal base plate so that the fourth electrode and the second metal base plate face each other;
a second diode element provided on a fourth semiconductor chip having a pair of surfaces, including a second cathode electrode provided on one surface of the fourth semiconductor chip and connected to the second terminal, and a second anode electrode provided on other surface of the fourth semiconductor chip, and mounted on the second metal base plate so that the second cathode electrode and the second metal base plate face each other;
a first control terminal connected to the third electrode;
a second control terminal connected to the sixth electrode; and
wires electrically connecting the first anode electrode, the second anode electrode, the second electrode, and the fifth electrode, respectively.
2. A bidirectional switch module including a bidirectional switch circuit in which a plurality of semiconductor elements are combined and in which a current can flow bidirectionally from a first terminal to a second terminal and from the second terminal to the first terminal, the bidirectional switch module comprising:
a first metal base plate including a first semiconductor chip and a second semiconductor chip mounted thereon, having an area wider than a total area of the first semiconductor chip and the second semiconductor chip, and connected to the first terminal;
a second metal base plate including a third semiconductor chip and a fourth semiconductor chip mounted thereon, having an area wider than a total area of the third semiconductor chip and the fourth semiconductor chip, and connected to the second terminal;
a first semiconductor switch element provided on the first semiconductor chip, including a first electrode provided on one surface of the first semiconductor chip, a second electrode provided on other surface of the first semiconductor chip and serving as a current path to the first electrode, and a third electrode provided on the other surface of the first semiconductor chip and controlling a current between the first electrode and the second electrode, and provided so that a surface of the first electrode and a surface of the first metal base plate are connected to each other;
a first diode element provided on the second semiconductor chip, including a first cathode electrode provided on one surface of the second semiconductor chip, and a first anode electrode provided on other surface of the second semiconductor chip, and provided so that a surface of the first cathode electrode and the surface of the first metal base plate are connected to each other;
a second semiconductor switch element provided on the third semiconductor chip, including a fourth electrode provided on one surface of the third semiconductor chip, a fifth electrode provided on other surface of the third semiconductor chip and serving as a current path to the fourth electrode, and a sixth electrode provided on the other surface of the third semiconductor chip and controlling a current between the fourth electrode and the fifth electrode, and provided so that a surface of the fourth electrode and a surface of the second metal base plate are connected to each other;
a second diode element provided on the fourth semiconductor chip, including a second cathode electrode provided on one surface of the fourth semiconductor chip, and a second anode electrode provided on other surface of the fourth semiconductor chip, and provided so that a surface of the second cathode electrode and the surface of the second metal base plate are connected to each other;
a first control terminal connected to the third electrode; and
a second control terminal connected to the sixth electrode;
wherein, when a current flows from the first terminal to the second terminal, the current flows through the first metal base plate, the first semiconductor switch element, the second diode element, and the second metal base plate by supplying a first drive signal to the first control terminal, and
when a current flows from the second terminal to the first terminal, the current flows through the second metal base plate, the second semiconductor switch element, the first diode element, and the first metal base plate by supplying a second drive signal to the second control terminal.
3. The bidirectional switch module according to claim 2 , including wires electrically connecting the first anode electrode, the second anode electrode, the second electrode, and the fifth electrode respectively.
4. The bidirectional switch module according to claim 1 , wherein the wires electrically connecting the first anode electrode, the second anode electrode, the second electrode, and the fifth electrode respectively are comprised of metal thin wires.
5. The bidirectional switch module according to claim 3 , wherein the wires electrically connecting the first anode electrode, the second anode electrode, the second electrode, and the fifth electrode respectively are comprised of metal thin wires.
6. The bidirectional switch module according to claim 1 , wherein the first metal base plate and the first terminal are one metal plate constructed integrally, and the second metal base plate and the second terminal are another metal plate constructed integrally.
7. The bidirectional switch module according to claim 2 , wherein the first metal base plate and the first terminal are one metal plate constructed integrally, and the second metal base plate and the second terminal are another metal plate constructed integrally.
8. The bidirectional switch module according to claim 3 , wherein the first metal base plate and the first terminal are one metal plate constructed integrally, and the second metal base plate and the second terminal are another metal plate constructed integrally.
9. The bidirectional switch module according to claim 4 , wherein the first metal base plate and the first terminal are one metal plate constructed integrally, and the second metal base plate and the second terminal are another metal plate constructed integrally.
10. The bidirectional switch module according to claim 1 , wherein the first metal base plate and the first terminal are metal plates continuously connected, and the second metal base plate and the second terminal are other metal plates continuously connected.
11. The bidirectional switch module according to claim 2 , wherein the first metal base plate and the first terminal are metal plates continuously connected, and the second metal base plate and the second terminal are other metal plates continuously connected.
12. The bidirectional switch module according to claim 3 , wherein the first metal base plate and the first terminal are metal plates continuously connected, and the second metal base plate and the second terminal are other metal plates continuously connected.
13. The bidirectional switch module according to claim 4 , wherein the first metal base plate and the first terminal are metal plates continuously connected, and the second metal base plate and the second terminal are other metal plates continuously connected.
14. The bidirectional switch module according to claim 1 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs.
15. The bidirectional switch module according to claim 2 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs.
16. The bidirectional switch module according to claim 3 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs.
17. The bidirectional switch module according to claim 4 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs.
18. The bidirectional switch module according to claim 5 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs.
19. The bidirectional switch module according to claim 6 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs.
20. The bidirectional switch module according to claim 1 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs.
21. The bidirectional switch module according to claim 2 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs.
22. The bidirectional switch module according to claim 3 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs.
23. The bidirectional switch module according to claim 4 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs.
24. The bidirectional switch module according to claim 5 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs.
25. The bidirectional switch module according to claim 6 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs.
26. The bidirectional switch module according to claim 1 , wherein the first semiconductor switch element and the second semiconductor switch element are composed of bipolar transistors.
27. The bidirectional switch module according to claim 2 , wherein the first semiconductor switch element and the second semiconductor switch element are composed of bipolar transistors.
28. The bidirectional switch module according to claim 3 , wherein the first semiconductor switch element and the second semiconductor switch element are composed of bipolar transistors.
29. The bidirectional switch module according to claim 4 , wherein the first semiconductor switch element and the second semiconductor switch element are composed of bipolar transistors.
30. The bidirectional switch module according to claim 5 , wherein the first semiconductor switch element and the second semiconductor switch element are composed of bipolar transistors.
31. The bidirectional switch module according to claim 6 , wherein the first semiconductor switch element and the second semiconductor switch element are composed of bipolar transistors.
32. The bidirectional switch module according to claim 1 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs, the first electrode and the fourth electrode are drain electrodes, the second electrode and the fifth electrode are source electrodes, and the third electrode and the sixth electrode are gate electrodes.
33. The bidirectional switch module according to claim 2 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs, the first electrode and the fourth electrode are drain electrodes, the second electrode and the fifth electrode are source electrodes, and the third electrode and the sixth electrode are gate electrodes.
34. The bidirectional switch module according to claim 3 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs, the first electrode and the fourth electrode are drain electrodes, the second electrode and the fifth electrode are source electrodes, and the third electrode and the sixth electrode are gate electrodes.
35. The bidirectional switch module according to claim 4 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs, the first electrode and the fourth electrode are drain electrodes, the second electrode and the fifth electrode are source electrodes, and the third electrode and the sixth electrode are gate electrodes.
36. The bidirectional switch module according to claim 5 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs, the first electrode and the fourth electrode are drain electrodes, the second electrode and the fifth electrode are source electrodes, and the third electrode and the sixth electrode are gate electrodes.
37. The bidirectional switch module according to claim 6 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of MOSFETs, the first electrode and the fourth electrode are drain electrodes, the second electrode and the fifth electrode are source electrodes, and the third electrode and the sixth electrode are gate electrodes.
38. The bidirectional switch module according to claim 1 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs, the first electrode and the fourth electrode are collector electrodes, the second electrode and the fifth electrode are emitter electrodes, and the third electrode and the sixth electrode are gate electrodes.
39. The bidirectional switch module according to claim 2 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs, the first electrode and the fourth electrode are collector electrodes, the second electrode and the fifth electrode are emitter electrodes, and the third electrode and the sixth electrode are gate electrodes.
40. The bidirectional switch module according to claim 3 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs, the first electrode and the fourth electrode are collector electrodes, the second electrode and the fifth electrode are emitter electrodes, and the third electrode and the sixth electrode are gate electrodes.
41. The bidirectional switch module according to claim 4 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs, the first electrode and the fourth electrode are collector electrodes, the second electrode and the fifth electrode are emitter electrodes, and the third electrode and the sixth electrode are gate electrodes.
42. The bidirectional switch module according to claim 5 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs, the first electrode and the fourth electrode are collector electrodes, the second electrode and the fifth electrode are emitter electrodes, and the third electrode and the sixth electrode are gate electrodes.
43. The bidirectional switch module according to claim 6 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of IGBTs, the first electrode and the fourth electrode are collector electrodes, the second electrode and the fifth electrode are emitter electrodes, and the third electrode and the sixth electrode are gate electrodes.
44. The bidirectional switch module according to claim 1 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of bipolar transistors, the first electrode and the fourth electrode are collector electrodes, and the second electrode and the fifth electrode are emitter electrodes.
45. The bidirectional switch module according to claim 2 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of bipolar transistors, the first electrode and the fourth electrode are collector electrodes, and the second electrode and the fifth electrode are emitter electrodes.
46. The bidirectional switch module according to claim 3 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of bipolar transistors, the first electrode and the fourth electrode are collector electrodes, and the second electrode and the fifth electrode are emitter electrodes.
47. The bidirectional switch module according to claim 4 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of bipolar transistors, the first electrode and the fourth electrode are collector electrodes, and the second electrode and the fifth electrode are emitter electrodes.
48. The bidirectional switch module according to claim 5 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of bipolar transistors, the first electrode and the fourth electrode are collector electrodes, and the second electrode and the fifth electrode are emitter electrodes.
49. The bidirectional switch module according to claim 6 , wherein the first semiconductor switch element and the second semiconductor switch element are comprised of bipolar transistors, the first electrode and the fourth electrode are collector electrodes, and the second electrode and the fifth electrode are emitter electrodes.