Dielectric materials for power transfer system
View Patent ↗A contactless power transfer system is proposed. The power transfer system comprises a field-focusing element comprising a dielectric material. The dielectric material comprises a composition that is selected from the family of (Ba,Sr)TiO 3 or CaCu 3 Ti 4 O 12 . The compositions of the (Ba, Sr)TiO 3 include the materials such as Ca 1-x-y Ba x Sr y Ti 1-z Cr z O 3-δ N p , wherein 0<x<1; 0<y<1; 0≦z≦0.01; 0≦δ≦1; and 0≦p≦1. The compositions of the CaCu 3 Ti 4 O 12 include the materials such as Ca 1-x-y Ba x Sr y (Ca 1-z Cu z )Cu 2 Ti 4-δ Al δ O 12-0.5δ , wherein 0≦x<0.5; 0≦y<0.5; 0≦z<1; and 0≦δ≦0.1.
1. A power transfer system comprising:
a first coil coupled to a power source;
a second coil coupled to a load; and
a field-focusing element comprising two open ends, disposed between the first coil and the second coil and comprising a dielectric material, wherein the dielectric material comprises Ca 1-x-y Ba x Sr y Ti 1-z Cr z O 3-δ N p ,
wherein 0<x<1; 0.4≦y<1; 0≦z≦0.01; 0≦δ≦1; and 0≦p≦1; and wherein the field-focusing element is configured to develop a standing wave current distribution and focus the magnetic field onto the second coil.
2. The system of claim 1 , wherein 0.9≦x+y<1.
3. The system of claim 2 , wherein 0.3≦x, and x+y=1.
4. The system of claim 1 , wherein density of the dielectric material is greater than about 96% of the theoretical density.
5. The system of claim 1 , wherein the dielectric material is a polycrystalline material comprising grains and grain boundaries and wherein the dielectric material further comprises a metallic bismuth phase disposed at the grain boundaries.
6. The system of claim 1 , wherein z>0, and δ and p are both equal to 0.
7. The system of claim 1 , wherein z=0, and δ and p are both greater than 0.
8. The system of claim 1 , wherein z, δ, and p are all greater than zero.
9. The system of claim 1 , wherein the dielectric material comprises Ba 0.3 Sr 0.7 Cr 0.005 Ti 0.995 O 2.8 N 0.13 .
10. The system of claim 1 , wherein the dielectric material further comprises fluorine in an amount less than about 1 atomic percent.
11. The system of the claim 1 , wherein the first coil and the second coil are spaced apart from the field-focusing element.
12. A power transfer system comprising:
a first coil coupled to a power source;
a second coil coupled to a load; and
a field-focusing element disposed between the first coil and the second coil and comprising a dielectric material, wherein the dielectric material comprises Ca 1-x-y Ba x Sr y Ti 1-z Cr z O 3-δ N p ,
wherein 0<x<1, 0.4≦y<1; 0≦z≦0.01; 0<δ≦0.5; and 0<p≦0.4.
13. The power transfer system of claim 1 , wherein the field-focusing element comprises a plurality of resonators arranged in an array, wherein the plurality of resonators is configured to interfere constructively when excited by different phases.
14. The system of claim 12 , wherein the dielectric material further comprises fluorine in an amount less than about 1 atomic percent.
15. The system of claim 12 , wherein 0.9 ≦x+y ≦1.
16. The system of claim 15 , wherein 0.3 ≦x, and x+y=1.
17. The system of claim 12 , wherein z=0.
18. The system of claim 12 , wherein the dielectric material comprises Ba 0.3 Sr 0.7 Cr 0.005 Ti 0.995 O 2.8 N 0.13 .
19. The system of claim 12 , wherein the dielectric material is a polycrystalline material comprising grains and grain boundaries and wherein the dielectric material further comprises a phase comprising bismuth disposed at the grain boundaries.
20. The system of the claim 12 , wherein the first coil and the second coil are spaced apart from the field-focusing element.
21. A power transfer system comprising:
a first coil coupled to a power source;
a second coil coupled to a load; and
a field-focusing element disposed between the first coil and the second coil, and comprising a dielectric material, wherein the dielectric material comprises Ba 0.3 Sr 0.7 Cr 0.002 Ti 0.998 O 3 .
22. The system of claim 21 , wherein the dielectric material is a polycrystalline material comprising grains and grain boundaries and wherein the dielectric material further comprises a metallic bismuth phase disposed at the grain boundaries.