TFT-LCD array substrate and manufacturing method thereof

1. A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:

step 1 of forming a gate metal film on a substrate and patterning the gate metal film to form a gate line and a gate electrode;

step 2 of sequentially depositing a gate insulating film, a semiconductor film and a doped semiconductor film on the substrate after step 1 and patterning the stacked semiconductor film and the doped semiconductor film to form an active layer;

step 3 of sequentially depositing a transparent conductive film and a source/drain metal film on the substrate after step 2, and patterning the transparent conductive film and the source/drain metal film to form a pixel electrode, a data line, a source electrode, a drain electrode and a TFT channel region with a first half-tone mask or a first gray-tone mask, wherein the pixel electrode is directly connected with the drain electrode; and

step 4 of depositing a passivation layer and a light-blocking film on the substrate after step 3, and patterning the passivation layer and the light-blocking film to form a light-blocking layer, a gate pad via hole and a data pad via hole by a patterning process with a second half-tone mask or a second gray-tone mask, wherein the light-blocking layer is positioned over the TFT channel region.

2. The method of manufacturing the TFT-LCD array substrate according to claim 1 , wherein the step 3 comprises:

sequentially depositing the transparent conductive film and the source/drain metal film on the substrate after step 2;

applying a photoresist layer on the source/drain metal film;

exposing the photoresist layer with the first half-tone mask or the first gray-tone mask to form a photoresist-completely-removed region, a photoresist-completely-retained region and a photoresist-partially-retained region, wherein the photoresist-completely-retained region corresponds to the region where the data line, the source electrode and the drain electrode are to be formed, the photoresist-partially-retained region corresponds to the region where the pixel electrode is to be formed, and the photoresist-completely-removed region corresponds to the region other than the above regions, and wherein after a developing process is performed, the thickness of the photoresist layer in the photoresist-completely-retained is not changed, the photoresist layer in the photoresist-completely-removed region is removed, and the thickness of the photoresist layer in the photoresist-partially-retained region is decreased;

removing the source/drain metal film and the transparent conductive film in the photoresist-completely-removed region, removing the doped semiconductor layer provided over the gate electrode in the photoresist-completely-removed region and partially etching the semiconductor layer in the thickness direction thereof in the photoresist-completely-removed region by a first etching process;

removing the photoresist layer in the photoresist-partially-retained region by an ashing process to expose the source/drain metal film in the photoresist-partially-retained region;

removing the source/drain metal film in the photoresist-partially-retained region by a second etching process to form the pixel electrode, the data line, the source electrode, the drain electrode and the TFT channel region; and

removing the remaining photoresist layer.

3. The method of manufacturing the TFT-LCD array substrate according to claim 1 , wherein the step 1 further comprises:

patterning the gate metal film to form a common line along with the gate electrode and the gate line.

4. The method of manufacturing the TFT-LCD array substrate according to claim 2 , wherein the step 1 further comprises:

patterning the gate metal film to form a common line along with the gate electrode and the gate line.

5. The method of manufacturing the TFT-LCD array substrate according to claim 1 , wherein the step 4 comprises:

depositing the passivation layer and the light-blocking film on the substrate after step 3;

applying a photoresist layer on the light-blocking film;

exposing the photoresist layer with the second half-tone mask or the second gray-tone mask to form a photoresist-completely-removed region, a photoresist-completely-retained region and a photoresist-partially-retained region, wherein the photoresist-completely-retained region corresponds to the region where the light-blocking layer is to be formed, the photoresist-completely-removed region corresponds to the region where the gate pad via hole and the data pad via hole are to be formed, and the photoresist-partially-retained region corresponds to the region other than the above regions; and wherein after a developing process is performed, the thickness of the photoresist layer in the photoresist-completely-retained is not changed, the photoresist layer in the photoresist-completely-removed region is removed, and the thickness of the photoresist layer in the photoresist-partially-retained region is decreased;

removing the light-blocking film, the passivation layer and the gate insulating layer of the photoresist-completely-removed region in a gate pad region and removing the light-blocking film and the passivation layer of the photoresist-completely-removed region in a data pad region by a first etching process to form the gate pad via hole and the data pad via hole;

removing the photoresist layer in the photoresist-partially-retained region by an ashing process to expose the light-blocking film in the photoresist-partially-retained region;

removing the light-blocking film in the photoresist-partially-retained region by a second etching process to form the light-blocking layer; and

removing the remaining photoresist layer.

6. The method of manufacturing the TFT-LCD array substrate according to claim 2 , wherein the step 4 comprises:

depositing the passivation layer and the light-blocking film on the substrate after step 3;

applying a photoresist layer on the light-blocking film;

exposing the photoresist layer with the second half-tone mask or the second gray-tone mask to form a photoresist-completely-removed region, a photoresist-completely-retained region and a photoresist-partially-retained region, wherein the photoresist-completely-retained region corresponds to the region where the light-blocking layer is to be formed, the photoresist-completely-removed region corresponds to the region where the gate pad via hole and the data pad via hole are to be formed, and the photoresist-partially-retained region corresponds to the region other than the above regions; and wherein after a developing process is performed, the thickness of the photoresist layer in the photoresist-completely-retained is not changed, the photoresist layer in the photoresist-completely-removed region is removed, and the thickness of the photoresist layer in the photoresist-partially-retained region is decreased;

removing the light-blocking film, the passivation layer and the gate insulating layer of the photoresist-completely-removed region in a gate pad region and removing the light-blocking film and the passivation layer of the photoresist-completely-removed region in a data pad region by a first etching process to form the gate pad via hole and the data pad via hole;

removing the photoresist layer in the photoresist-partially-retained region by an ashing process to expose the light-blocking film in the photoresist-partially-retained region;

removing the light-blocking film in the photoresist-partially-retained region by a second etching process to form the light-blocking layer; and

removing the remaining photoresist layer.

7. The method of manufacturing the TFT-LCD array substrate according to claim 1 , wherein the step 4 comprises:

depositing the passivation layer and the light-blocking film on the substrate after step 3;

applying a photoresist layer on the light-blocking film;

exposing the photoresist layer with the second half-tone mask or the second gray-tone mask to form a photoresist-completely-removed region, a photoresist-completely-retained region and a photoresist-partially-retained region, wherein the photoresist-completely-retained region corresponds to the region where the light-blocking layer and a common electrode line are to be formed, the photoresist-completely-removed region corresponds to the region where the gate pad via hole and the data pad via hole are to be formed, and the photoresist-partially-retained region corresponds to the region other than the above regions; and wherein after a developing process is performed, the thickness of the photoresist layer in the photoresist-completely-retained is not changed, the photoresist layer in the photoresist-completely-removed region is removed, and the thickness of the photoresist layer in the photoresist-partially-retained region is decreased;

removing the light-blocking film, the passivation layer and the gate insulating layer of the photoresist-completely-removed region in a gate pad region and removing the light-blocking film and the passivation layer of the photoresist-completely-removed region in a data pad region by a first etching process to form the gate pad via hole and the data pad via hole;

removing the photoresist layer in the photoresist-partially-retained region by an ashing process to expose the light-blocking film in the photoresist-partially-retained region;

removing the light-blocking film in the photoresist-partially-retained region by a second etching process to form the light-blocking layer and the common electrode line; and

removing the remaining photoresist layer.

8. The method of manufacturing the TFT-LCD array substrate according to claim 2 , wherein the step 4 comprises:

depositing the passivation layer and the light-blocking film on the substrate after step 3;

applying a photoresist layer on the light-blocking film;

exposing the photoresist layer with the second half-tone mask or the second gray-tone mask to form a photoresist-completely-removed region, a photoresist-completely-retained region and a photoresist-partially-retained region, wherein the photoresist-completely-retained region corresponds to the region where the light-blocking layer and a common electrode line are to be formed, the photoresist-completely-removed region corresponds to the region where the gate pad via hole and the data pad via hole are to be formed, and the photoresist-partially-retained region corresponds to the region other than the above regions; and wherein after a developing process is performed, the thickness of the photoresist layer in the photoresist-completely-retained is not changed, the photoresist layer in the photoresist-completely-removed region is removed, and the thickness of the photoresist layer in the photoresist-partially-retained region is decreased;

removing the light-blocking film, the passivation layer and the gate insulating layer of the photoresist-completely-removed region in a gate pad region and removing the light-blocking film and the passivation layer of the photoresist-completely-removed region in a data pad region by a first etching process to form the gate pad via hole and the data pad via hole;

removing the photoresist layer in the photoresist-partially-retained region by an ashing process to expose the light-blocking film in the photoresist-partially-retained region;

removing the light-blocking film in the photoresist-partially-retained region by a second etching process to form the light-blocking layer and the common electrode line; and

removing the remaining photoresist layer.