Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm

1. An optical device comprising:

a gallium nitride substrate having a non-polar crystalline surface region;

an n-type GaN cladding layer overlying the surface region, the n-type GaN cladding layer having a thickness from 100 nm to 3000 nm with a silicon doping level of 5E17 cm-3 to 3E18 cm-3;

an n-type SCH layer overlying the n-type GaN cladding layer, the n-type SCH layer comprised of InGaN with a molar fraction of indium of between 4% and 6% and having a thickness from 45 nm to 60 nm;

a multiple quantum well active region overlying the n-type SCH layer, the multiple quantum well active region comprised of five 4.5 nm-5.5 nm-thick InGaN quantum wells separated by four 9.5 nm-10.5 nm-thick InGaN barriers with an indium molar fraction of between 1.5% and 3%;

a p-type guide layer overlying the multiple quantum well active region, the p-type guide layer comprised of GaN with a thickness from 10 nm to 20 nm;

an electron blocking layer overlying the p-type guide layer, the electron blocking layer comprised of AlGaN with a molar fraction of aluminum of between 15% and 22% and having a thickness from 10 nm to 15 nm and doped with magnesium;

a p-type GaN cladding layer overlying the electron blocking layer, the p-type GaN cladding layer having a thickness from 400 nm to 1000 nm with a Mg doping level of 5E17 cm-3 to 1E19 cm-3; and

a p-type GaN contact layer overlying the p-type GaN cladding layer, the p-type GaN contact layer having a thickness from 20 nm to 40 nm with a magnesium doping level of 1E20 cm-3 to 1E21 cm-3.