IP Library Granted Patent US 8,551,307
Granted Patent B2
US 8,551,307 · App. 12/779,459 · Granted Oct 8, 2013

Sputtering target apparatus

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Quick Facts
Patent No.
US 8,551,307
App. No.
12/779,459
Granted
Oct 8, 2013
Kind
B2
Abstract

A sputtering target apparatus is provided. The sputtering target apparatus includes a first target assembly including a first target array having a first target, a second target disposed adjacent to the first target, and a first target dividing region disposed between the first and second targets, the first target assembly extending along a first direction, wherein the first target dividing region has a longitudinal cross-section that is oblique with respect to the first direction.

Claims (49)

1. A sputtering target apparatus, comprising:

a first target assembly extending lengthwise along a first direction, the first target assembly comprising:

a first target array, comprising:

a cylindrical first target;

a cylindrical second target disposed adjacent to the first target; and

an elliptical first target dividing region disposed between the first target and the second target,

wherein the first target dividing region lies entirely within a plane disposed at an oblique angle with respect to the first direction.

2. The sputtering target apparatus of claim 1 , wherein a longitudinal cross-section of the second target with respect to the first direction comprises a third boundary and a fourth boundary, and a parallelogram is formed by joining the third boundary and the fourth boundary to virtual lines.

3. The sputtering target apparatus of claim 1 , wherein the parallelogram is divided into two right triangles by a virtual dividing line connecting one vertex of the parallelogram with the opposing vertex.

4. The sputtering target apparatus of claim 1 , further comprising:

a second target assembly extending lengthwise parallel to the first target array, the second target assembly comprising:

a second target array comprising:

a cylindrical third target;

a cylindrical fourth target disposed adjacent to the third target; and

a second target dividing region disposed between the third target and the fourth target, the second target dividing region having a non-circular elliptical shape and lying entirely within a plane disposed at an oblique angle with respect to the first direction,

wherein the second target assembly is disposed adjacent to the first target assembly in a second direction.

5. The sputtering target apparatus of claim 4 , wherein a virtual line extending from the first target dividing region in the second direction intersects the third target or the fourth target while a virtual line extending from the second target dividing region in the second direction intersects the first target or the second target.

6. The sputtering target apparatus of claim 5 , wherein the first direction and the second direction are orthogonal to each other.

7. The sputtering target apparatus of claim 1 , wherein the first target assembly further comprises a hollow cylindrical rotary roller comprising an outer circumference, and the first target and the second target are affixed to the outer circumference of the rotary roller.

8. The sputtering target apparatus of claim 7 , wherein the rotary roller comprises the shape of a hollow cylinder having one end closed.

9. The sputtering target apparatus of claim 7 , wherein each of the first target and the second target comprises the shape of a hollow cylinder.

10. The sputtering target apparatus of claim 7 , wherein the rotary roller further comprises a support ring affixed to the outer circumference thereof.

11. The sputtering target apparatus of claim 1 , wherein each of the first target and the second targets comprises a planar shape.

12. The sputtering target apparatus of claim 1 , wherein each of the first target and the second target comprises oxide containing at least one metal selected from the group consisting of zinc (Zn), indium (In), gallium (Ga), and tin (Sn).

13. The sputtering target apparatus of claim 1 , wherein the first target dividing region comprises a bonding agent.

14. The sputtering target apparatus of claim 13 , wherein the bonding agent comprises indium (In).

15. A sputtering target apparatus, comprising:

a first target assembly comprising:

a first target array extending along a first direction, the first target array comprising:

a cylindrical first target having a planar lower surface;

a cylindrical second target disposed adjacent to the first target; and

a first target dividing region disposed between a planar lower surface of the first target and a planar upper surface of the second target, wherein,

the first target dividing region comprises two boundaries and a length of a path between the two boundaries is greater than a thickness of the first target and a thickness of the second target, and

the lower surface of the first target and the upper surface of the second target are parallel to a plane disposed at an oblique angle with respect to the first direction.

16. The sputtering target apparatus of claim 15 , wherein the first target comprises a first convex portion and a first concave portion, and the second target comprises a second convex portion and a second concave portion, and in the first target dividing region, the first convex portion and the first concave portion are respectively disposed opposite to the second concave portion and the second convex portion.

17. The sputtering target apparatus of claim 15 , wherein

the first target comprises a first concave portion, a second concave portion, and a first convex portion disposed between the first concave portion and the second concave portion,

the second target comprises a second convex portion, a third convex portion, and a third concave portion disposed between the second convex portion and the third convex portion, and

the first convex portion is disposed opposite to the third concave portion in the first target dividing region.

18. The sputtering target apparatus of claim 15 , wherein the first target comprises a bonding agent.

19. The sputtering target apparatus of claim 18 , wherein the bonding agent comprises indium (In).

20. The sputtering target apparatus of claim 1 , wherein,

the longitudinal cross-section of the first target comprises a first boundary and a second boundary,

a non-rectangular parallelogram is formed by joining ends of the first boundary and the second boundary with virtual lines, and

the first boundary and the second boundary are located on the outer circumference of the first target.

21. The sputtering target apparatus of claim 15 , wherein,

a longitudinal cross-section of the first target comprises a first boundary and a second boundary,

a non-rectangular parallelogram is formed by joining ends of the first boundary and the second boundary with virtual lines, and

the first boundary and the second boundary are located on the outer circumference of the first target.

Assignments (2)
CHANGE OF NAME Recorded Aug 28, 2012
From: SAMSUNG ELECTRONICS CO., LTD.
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 028859/0773 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2010
From: KIM, DO-HYUN; LEE, DONG-HOON; JEONG, CHANG-OH
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 024487/0447 →