Thin-film transistor display panel including an oxide active layer and a nitrogen oxide passivation layer, and method of fabricating the same

1. A thin-film transistor (TFT) display panel, comprising:

gate wiring disposed on a substrate;

an oxide active layer pattern disposed on the gate wiring;

data wiring disposed on the oxide active layer pattern to cross the gate wiring;

a passivation layer disposed on the oxide active layer pattern and the data wiring, the passivation layer comprising nitrogen oxide (NO x ); and

a pixel electrode disposed on the passivation layer.

2. The display panel of claim 1 , wherein the passivation layer does not contain hydrogen.

3. The display panel of claim 1 , wherein the oxide active layer pattern comprises at least one material selected from ZnO, InZnO, InGaO, InSnO, ZnSnO, GaSnO, GaZnO, GaZnSnO, and GaInZnO.

4. The display panel of claim 1 , further comprising a gate insulating film, the gate insulating film comprising:

a lower gate insulating film disposed on the gate wiring and comprising SiN x ; and

an upper gate insulating film disposed on the lower gate insulating film and comprising NO x .

5. The display panel of claim 4 , wherein the upper gate insulating film comprises less hydrogen than the lower gate insulating film.

6. The display panel of claim 5 , wherein the passivation layer does not contain hydrogen.

7. The display panel of claim 2 , wherein the passivation layer comprises a double layer structure, the double layer structure comprising a first layer comprising SiN x and second layer comprising NO x .

8. The display panel of claim 7 , wherein the oxide active layer pattern comprises at least one material selected from ZnO, InZnO, InGaO, InSnO, ZnSnO, GaSnO, GaZnO, GaZnSnO, and GaInZnO.

9. A method of fabricating a TFT display panel, the method comprising:

forming gate wiring on a substrate;

forming an oxide active layer pattern on the gate wiring;

forming data wiring on the oxide active layer pattern to cross the gate wiring;

forming a passivation layer comprising nitrogen oxide (NO x ) on the oxide active layer pattern and the data wiring; and

forming a pixel electrode on the passivation layer.

10. The method of claim 9 , wherein the passivation layer is formed in the presence of source gases, the source gases comprising nitrogen (N 2 ), helium (He) or argon (Ar), and oxygen (O 2 ).

11. The method of claim 10 , wherein the source gases further comprise flow rates, wherein the flow rate of N 2 ranges from 6 sccm to 12 sccm, and a ratio of the combined flow rates of N 2 and O 2 to the flow rate of Ar is 3:1.

12. The method of claim 10 , wherein the passivation layer is formed under electrical conditions for deposition ranging from 0.3 W/cm 2 to 0.7 W/cm 2 .

13. The method of claim 10 , wherein the passivation layer does not contain hydrogen.

14. The method of claim 9 , further comprising:

forming a lower gate insulating film comprising SiN x on the gate wiring; and

forming an upper gate insulating film comprising NO x on the lower gate insulating film.

15. The method of claim 14 , wherein the upper gate insulating film is formed in the presence of source gases, the source gases comprising N 2 , He or Ar, and O 2 .

16. The method of claim 15 , wherein the passivation layer comprises a bilayer, the bilayer comprising:

a first layer comprising the NO x ; and

a second insulating layer.

17. The method of claim 16 , wherein the first layer comprises less hydrogen than the second insulating layer.

18. The method of claim 16 , wherein the second insulating layer comprises organic material.

19. The method of claim 14 , wherein the upper gate insulating film does not contain hydrogen.

20. The method of claim 14 , wherein the passivation layer does not contain hydrogen.