Nanowire Dispersion Compositions and Uses Thereof
Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.
1 . A method of improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprising introducing a low molecular weight dispersant into the aqueous or non-aqueous solution.
2 . The method of claim 1 , wherein the dispersant has an HLB value less than about 15.
3 . The method of claim 1 , wherein the dispersant has an HLB value less than about 10.
4 . The method of claim 1 , wherein the dispersant has a molecular weight less than about 3,000.
5 . The method of claim 1 , wherein the dispersant is selected from a nonionic or polymeric surfactant.
6 . The method of claim 5 , further comprising introducing into the aqueous or non-aqueous solution one or more low chain polymeric dispersants selected from the group comprising Ammonium Polyacrylate Acrysol G-111, PVA, and PVP.
7 . The method of claim 1 , wherein the dispersant is selected from the group comprising a nonionic SilWet surfactant, a Surfynol surfactant, a Pluronic polymeric surfactant, and combinations and mixtures thereof.
8 . The method of claim 7 , wherein the dispersant comprises a Pluronic polymer surfactant.
9 . The method of claim 1 , wherein the nanowires comprise silicon nanowires.
10 . The method of claim 1 , wherein the nanowires have an aspect ratio greater than about 1000.
11 . A method of improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprising oxidizing the nanowires using a non-chemical oxidation process prior to dispersing the nanowires in the solution.
12 . The method of claim 11 , wherein oxidizing the nanowires comprises performing a thermal oxidation process at or above 900° C. to form one or more shell layers of SiOx on the nanowires.
13 . The method of claim 12 , wherein the one or more shell layers comprises SiO 2 .
14 . The method of claim 13 , wherein the plurality of nanowires comprise silicon nanowires.