Method for etching glass substrate
View Patent ↗The invention provides a method for etching which is intended for reducing the thickness of a glass substrate, and which attains a high etching rate and is capable of inhibiting haze generation on the glass substrate surface. The invention relates to a method for etching a glass substrate surface, comprising etching the glass substrate surface in an amount of 1-690 μm in terms of etching amount, in which the etching is conducted with an etchant having an HF concentration of 1-5 wt % and an HCl concentration of 1 wt % or higher.
1. A method for etching a glass substrate surface, comprising:
etching a surface of a glass substrate in an etching amount of 1-690 μm,
wherein the etching comprises applying an etchant having an HF concentration of 1-5 wt % and an HCl concentration of 1 wt % or higher, the glass substrate comprises 50 to 66% by mass of SiO 2 , 10.5 to 22% by mass of Al 2 O 3 , 5 to 12% by mass of B 2 O 3 , 0 to 8% by mass of MgO, 0 to 14.5% by mass of CaO, 0 to 24% by mass of SrO, and 0 to 13.5% by mass of BaO, and a sum of MgO, CaO, SrO and BaO in the glass substrate is 9 to 29.5% by mass.
2. The method for etching a glass substrate surface according to claim 1 , wherein the etchant has an HF concentration of 2-5 wt % and an HCl concentration of 2 wt % or higher.
3. The method for etching a glass substrate surface according to claim 1 , wherein the etching is performed at an etching rate of 0.5 μm/min or higher.
4. The method for etching a glass substrate surface according to claim 1 , wherein the etchant has an HCl concentration of 9 wt % or more.
5. The method for etching a glass substrate surface according to claim 1 , wherein the surface of the glass substrate is etched in an etching amount of 10-650 μm.
6. The method for etching a glass substrate surface according to claim 1 , wherein the surface of the glass substrate is etched in an etching amount of 200-400 μm.
7. The method for etching a glass substrate surface according to claim 1 , wherein the etching is performed at an etching rate of 1.0 μm/min or higher.
8. The method for etching a glass substrate surface according to claim 1 , wherein the etchant has an HF concentration of 3-5 wt %.
9. The method for etching a glass substrate surface according to claim 1 , wherein the etchant has an HCl concentration of 9-18 wt %.
10. The method for etching a glass substrate surface according to claim 1 , wherein the etching comprises immersing the glass substrate in the etchant.
11. The method for etching a glass substrate surface according to claim 1 , wherein the etching comprises immersing the glass substrate in the etchant while stirring the etchant.