Highly-depleted laser doped semiconductor volume
A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations.
1. A photodiode, comprising:
an n-type section;
a p-type section;
a laser treated semiconductor section;
said laser treated semiconductor section disposed in relationship with said n-type section and said p-type section such that said n-type section and said p-type section can generate an electric field substantially capable of depleting at least a portion of said laser treated semiconductor section of free carriers and separating resulting electron-hole pairs generated in said laser treated semiconductor section.
2. The photodiode of claim 1 wherein the laser treated semiconductor section comprises a net doped n-type material and the n-type section has a higher level of n-doping than the laser treated semiconductor section.
3. The photodiode of claim 1 wherein the laser treated semiconductor section comprises a net doped p-type material and the p-type section has a higher level of p-doping than the laser treated semiconductor section.
4. The photodiode of claim 1 further comprising a pair of electrical contact points, one on either side of said laser treated semiconductor section.
5. The photodiode of claim 1 further comprising a substrate proximal to said laser treated semiconductor section and comprising at least a pair of electrical contact points, one proximal to a face of said laser treated semiconductor section and the other proximal to a face of said substrate opposing said face of said laser treated semiconductor section.
6. The photodiode of claim 1 further comprising a substrate proximal to said laser treated semiconductor section and a plurality of electrical contact points disposed proximal to a face of said laser-treated semiconductor section.
7. The photodiode of claim 6 wherein the n-type section partially encloses the p-type section and the laser treated semiconductor section.
8. The photodiode of claim 6 wherein the p-type section partially encloses the n-type section and the laser treated semiconductor section.
9. A photodiode comprising,
a first Schottky contact;
a second Schottky contact;
a laser treated semiconductor section;
said laser treated semiconductor disposed in relationship with said first Schottky contact and said second Schottky contact
such that said first Schottky contact and said second Schottky contact can generate an electric field capable of substantially preventing electron-hole pairs generated by said laser treated semiconductor section from recombining in at least some portion of said laser treated semiconductor section, wherein said first Schottky contact has a higher work function than said second Schottky contact.
10. The photodiode of claim 9 said Schottky contacts comprising a pair of electrical contact points, one on either side of said laser treated semiconductor section.
11. The photodiode of claim 9 further comprising a substrate proximal to said laser treated semiconductor section and said Schottky contacts comprising at least a pair of electrical contact points, one proximal to a face of said laser treated semiconductor section and the other proximal to a face of said substrate opposing said face of said laser treated semiconductor section.
12. The photodiode of claim 9 further comprising a substrate proximal to said laser treated semiconductor section and said Schottky contacts providing a plurality of electrical contact points disposed proximal to a face of said laser-treated semiconductor section.
13. The photodiode of claim 12 wherein said first Schottky contact partially encloses said second Schottky contact and said laser treated semiconductor section.
14. The photodiode of claim 12 wherein said second Schottky contact partially encloses said first Schottky contact and said laser treated semiconductor section.
15. A photodiode, comprising:
a first doped section;
a second doped section;
a laser treated semiconductor section;
said second doped section being substantially bounded by said first doped section, said laser treated semiconductor section being disposed in relationship with said first doped section and said second doped section such that said first doped section and said second doped section can generate an electric field substantially capable of depleting at least a portion of said laser treated semiconductor section of free carriers and separating resulting electron-hole pairs generated in said laser treated semiconductor section.
16. The photodiode of claim 15 further comprising,
a first and a second contact;
said first contact being coupled to said first doped section, said second contact being coupled to said second doped section.
17. The photodiode of claim 16 wherein said first doped section and said second doped section are substantially annular and said laser treated section is substantially disk shaped.
18. The photodiode of claim 17 wherein said first doped section is n doped and said second doped section is p doped.
19. The photodiode of claim 17 wherein said first doped section is p doped and said second doped section is n doped.