Polythiophenes and devices thereof
View Patent ↗An electronic device containing a polythiophene wherein R represents a side chain, m represents the number of R substituents; A is a divalent linkage; x, y and z represent, respectively, the number of R m substituted thienylenes, unsubstituted thienylenes, and divalent linkages A, respectively, in the monomer segment subject to z being 0 or 1, and n represents the number of repeating monomer segments in the polymer or the degree of polymerization.
1. An electronic device containing a polythiophene
wherein R is an alkyl, alkoxyalkyl, a perhaloalkyl, or a polyether; m represents the number of R substituents and is 1 or 2; A is a divalent linkage comprising from about 1 to about 40 carbon atoms; x represents the number of R m substituted thienylene moieties, y represents the number of unsubstituted thienylene moieties, and x and y are each from 1 to 5; z represents the number of divalent linkages A in the monomer segment, z being 0 or 1; n represents the number of repeating monomer segments in the polymer or the degree of polymerization; the device comprises a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of said polythiophene; and wherein n is a number of from about 5 to about 5,000.
2. The device of claim 1 , wherein R is alkyl containing from 1 to about 25 carbon atoms, and wherein n is from about 5 to about 1,000.
3. The device of claim 1 , wherein R is alkyl containing from 6 to about 12 carbon atoms.
4. The device of claim 1 , wherein R is alkyl containing from about 4 to about 25 carbon atoms.
5. The device of claim 1 , wherein the substrate is a plastic sheet of a polyester, a polycarbonate, or a polyimide; the gate, source, and drain electrodes are each independently comprised of gold, nickel, aluminum, platinum, indium titanium oxide, or a conductive polymer; and the gate dielectric layer comprises silicon nitride or silicon oxide.
6. The device of claim 1 , wherein the substrate is glass or a plastic sheet; the gate, source, and drain electrodes are each comprised of gold; and the gate dielectric layer is comprised of the organic polymer poly(methacrylate) or poly(vinyl phenol).
7. The device of claim 1 , wherein the polythiophene layer is formed by solution processes of spin coating, stamp printing, screen printing, or jet printing.
8. The device of claim 1 , wherein the gate, source, and drain electrodes, the gate dielectric layer, and the semiconductor layer are formed by solution processes of spin coating, solution casting, stamp printing, screen printing, or jet printing.
9. The device of claim 1 , wherein the substrate is a plastic sheet of a polyester, a polycarbonate, or a polyimide; the gate, source, and drain electrodes are fabricated from the organic conductive polymer polystyrene sulfonate-doped poly(3,4-ethylene dioxythiophene) or from a conductive ink/paste compound of a colloidal dispersion of silver in a polymer binder; and the gate dielectric layer is an organic polymer or an inorganic oxide particle-polymer composite.
10. The device of claim 1 , wherein the gate electrode is gold.
11. The device of claim 1 , wherein the gate electrode is nickel.
12. The device of claim 1 , wherein the gate electrode is aluminum.
13. The device of claim 1 , wherein the gate electrode is comprised of n-doped silicon and wherein the gate dielectric layer is comprised of silicon oxide.
14. The device of claim 13 , wherein the source and the drain electrodes are comprised of gold.
15. An electronic device containing a polythiophene
wherein R is alkyl selected from the group consisting of butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, and dodecyl; m represents the number of R substituents; A is a divalent linkage; x represents the number of R m substituted thienylene moieties, y represents the number of unsubstituted thienylene moieties, and x and y are each from 1 to 5; z represents the number of divalent linkages A in the monomer segment, z being 0 or 1; n represents the number of repeating monomer segments in the polymer or the degree of polymerization; the device comprises a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of said polythiophene; and wherein n is a number of from about 5 to about 5,000.
16. An electronic device containing a polythiophene
wherein R is an alkyl, alkoxyalkyl, a perhaloalkyl, or a polyether; m represents the number of R substituents; A is a divalent linkage; x represents the number of R m substituted thienylene moieties, y represents the number of unsubstituted thienylene moieties, and x and y are each from 1 to 5; z represents the number of divalent linkages A in the monomer segment, z being 0 or 1; n represents the number of repeating monomer segments in the polymer or the degree of polymerization; the device comprises a substrate, a gate electrode, a gate dielectric layer, a source electrode and a drain electrode, and in contact with the source/drain electrodes and the gate dielectric layer a semiconductor layer comprised of said polythiophene; and wherein n is a number of from about 5 to about 5,000; and wherein the divalent linkage A is arylene with from about 6 to about 40 carbon atoms.