Chips having rear contacts connected by through vias to front contacts
View Patent ↗A microelectronic unit is provided in which front and rear surfaces of a semiconductor element may define a thin region which has a first thickness and a thicker region having a thickness at least about twice the first thickness. A semiconductor device may be present at the front surface, with a plurality of first conductive contacts at the front surface connected to the device. A plurality of conductive vias may extend from the rear surface through the thin region of the semiconductor element to the first conductive contacts. A plurality of second conductive contacts can be exposed at an exterior of the semiconductor element. A plurality of conductive traces may connect the second conductive contacts to the conductive vias.
1. A microelectronic unit, comprising:
a semiconductor chip having a front surface and a rear surface remote from the front surface, a microelectronic device having an active semiconductor region in a region of semiconductor material below the front surface, a plurality of conductive pads each having a top surface exposed at the front surface and having a bottom surface remote from the top surface, the semiconductor chip having a first opening extending from the rear surface partially through the semiconductor material region towards the front surface, and a second opening meeting the first opening within the semiconductor material region and extending to a pad of the plurality of pads;
a conductive via in registration with and in contact with the pad and extending within the second opening;
a conductive interconnect electrically connected to the conductive via and extending away therefrom at least partly within the first opening;
a conductive contact electrically connected to the conductive interconnect, the contact available for connection with an element external to the microelectronic unit,
wherein the first opening has a first width in a lateral direction along the rear surface, the second opening has a second width in the lateral direction where the second opening meets the first opening, and the second opening has a third width in the lateral direction adjacent the conductive pad, the first width being greater than the second width, and the second width being greater than the third width.
2. A microelectronic unit as claimed in claim 1 , wherein the second opening is tapered to become smaller in a direction towards the conductive pad.
3. A microelectronic unit, comprising:
a semiconductor chip having a front surface and a rear surface remote from the front surface, a microelectronic device having an active semiconductor region in a region of semiconductor material below the front surface, a plurality of conductive elements each having a top surface exposed at the front surface and having a bottom surface remote from the top surface, the semiconductor chip having a first opening extending from the rear surface partially through the semiconductor material region towards the front surface, and a second opening meeting the first opening within the semiconductor material region and extending to at least a bottom surface of a conductive element of the plurality of conductive elements;
a conductive via in contact with the conductive element and extending within the second opening;
a conductive interconnect electrically connected to the conductive via and extending away therefrom at least partly within the first opening;
a conductive contact electrically connected to the conductive interconnect, the contact available for connection with an element external to the microelectronic unit,
wherein the first opening has a first width in a lateral direction along the rear surface, the second opening has a second width in the lateral direction where the second opening meets the first opening, and the second opening has a third width in the lateral direction adjacent the conductive element, the first and third widths being greater than the second width.
4. A microelectronic unit as claimed in claim 3 , wherein the second opening is tapered to become smaller in a direction towards the first opening.
5. A microelectronic unit as claimed in claim 1 , further comprising a first dielectric layer contacting an interior surface of the first opening, wherein a portion of the first dielectric layer extends along a surface of a second dielectric layer adjacent the conductive pad.
6. A microelectronic element as claimed in claim 1 or claim 3 , wherein a plurality of the second openings meet the first opening, the microelectronic unit having a plurality of the conductive vias extending from respective ones of the conductive pads or conductive elements, and a plurality of the conductive interconnects extending away from the conductive vias, wherein a dielectric layer insulates respective ones of at least some of the conductive interconnects.
7. A microelectronic element as claimed in claim 1 or claim 3 , wherein the conductive via includes a conductive coating having a contour conforming to a contour of an interior surface of the second opening.
8. A microelectronic unit as claimed in claim 7 , further including a dielectric layer overlying the conductive coating within the second opening.
9. A microelectronic element as claimed in claim 1 or claim 3 , wherein the conductive via is insulated from a surface of the semiconductor material region exposed within the second opening by a dielectric layer, the conductive via including a conductive material filling a volume within the second opening bounded by the dielectric layer.
10. A microelectronic unit as claimed in claim 9 , wherein the conductive interconnect includes a conductive feature within the first opening which has a contour conforming to a contour of an interior surface of the first opening.
11. A microelectronic unit as claimed in claim 1 or claim 3 , wherein the conductive interconnect is insulated from a surface of the semiconductor material region exposed within the first opening by a dielectric layer, the conductive interconnect including a conductive material filling a volume within the first opening bounded by the dielectric layer.
12. A microelectronic unit as claimed in claim 11 , wherein the conductive via has a contour conforming to a contour of an interior surface of the second opening.
13. A microelectronic element as claimed in claim 11 , wherein the conductive via is insulated from a surface of the semiconductor material region exposed within the second opening by a dielectric layer, the conductive via including a conductive material filling a volume within the second opening bounded by the dielectric layer.
14. A microelectronic unit, comprising:
a semiconductor chip having a front surface and a rear surface remote from the front surface, a microelectronic device including an active semiconductor region in a region of semiconductor material below the front surface, a plurality of conductive elements each having a top surface exposed at the front surface and having a bottom surface remote from the top surface, the semiconductor chip having a first opening extending from the rear surface partially through the semiconductor material region towards the front surface, and a second opening meeting the first opening within the semiconductor material region and extending towards the front surface;
a first dielectric layer overlying an interior surface of the first opening;
a second dielectric layer overlying an interior surface of the second opening, at least a portion of the first dielectric layer contacting a surface of the second dielectric layer;
a conductive via in contact with and in registration with the conductive element and extending within the second opening;
a conductive interconnect electrically connected with the conductive via and extending away therefrom at least partly within the first opening; and
a conductive contact electrically connected to the conductive interconnect, the contact available for connection with an element external to the microelectronic unit.
15. A microelectronic unit as claimed in claim 14 , wherein the first opening has a first width in a lateral direction along the rear surface, the second opening has a second width in the lateral direction where the second opening meets the first opening, and the second opening has a third width in the lateral direction adjacent the front surface, the first width being greater than the second width, and the second width being greater than the third width.
16. A microelectronic unit as claimed in claim 14 , wherein the first opening has a first width in a lateral direction along the rear surface, the second opening has a second width in the lateral direction where the second opening meets the first opening, and the second opening has a third width in the lateral direction adjacent the front surface, each of the first and the third widths being greater than the second width.
17. A microelectronic element as claimed in claim 14 , wherein a plurality of the second openings meet the first opening, the microelectronic unit having a plurality of the conductive vias extending from respective ones of the conductive elements, and a plurality of the conductive interconnects extending away therefrom, wherein the first dielectric layer provides insulation between respective ones of at least some of the conductive interconnects.
18. A microelectronic unit as claimed in claim 14 , wherein the conductive via includes a conductive coating having a contour conforming to a contour of an interior surface of the second opening.
19. A microelectronic unit as claimed in claim 18 , further including a dielectric layer overlying the conductive coating within the second opening.
20. A microelectronic unit as claimed in claim 14 , wherein the via is insulated from a surface of the semiconductor material region exposed within the second opening by a dielectric layer, the via including a conductive material filling a volume within the second opening bounded by the dielectric layer.
21. A microelectronic unit as claimed in claim 20 , wherein the conductive interconnect includes a conductive feature having a contour conforming to a contour of an interior surface of the first opening.
22. A microelectronic unit as claimed in claim 20 , wherein the conductive interconnect is insulated from a surface of the semiconductor material region exposed within the first opening by a dielectric layer, the conductive material of the conductive interconnect filling a volume within the first opening bounded by the dielectric layer.
23. A microelectronic unit as claimed in claim 15 , wherein the conductive material of the conductive via overlies the second dielectric layer, the conductive material filling a volume within the second opening remaining after providing the second dielectric layer.
24. A microelectronic unit as claimed in claim 23 , wherein the conductive interconnect includes a conductive feature having a contour conforming to a contour of an interior surface of the first opening.
25. A microelectronic unit as claimed in claim 24 , wherein the conductive interconnect is insulated from a surface of the semiconductor material region exposed within the first opening by a dielectric layer, the conductive interconnect filling a volume remaining within the first opening after providing the dielectric layer.