Thin film transistor array panel
View Patent ↗A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode.
1. A thin film transistor array panel comprising:
a first pixel electrode and a second pixel electrode neighboring each other in a second direction;
a data line extending in a first direction, transmitting a data voltage, and disposed between the first pixel electrode and the second pixel electrode;
a first gate line and a second gate line extending in the second direction and neighboring each other;
a first thin film transistor including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and
a second thin film transistor including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode,
wherein a relative position of the first source electrode with respect to the first drain electrode is the same as a relative position of the second source electrode with respect to the second drain electrode,
the first source electrode is connected to the data line through a first source connection, and the second source electrode is connected to the data line through a second source connection, and
the first source connection is longer than the second source connection.
2. The thin film transistor array panel of claim 1 , wherein
the first thin film transistor is disposed on the other side of the data line from the second thin film transistor.
3. The thin film transistor array panel of claim 2 , wherein
the first source electrode is disposed at a right side of the first drain electrode, and the second source electrode is disposed at a right side of the second drain electrode.
4. The thin film transistor array panel of claim 1 , wherein
the first thin film transistor is disposed on the other side of the data line from the second thin film transistor.
5. The thin film transistor array panel of claim 4 , wherein
the first source electrode is disposed to the left side of the first drain electrode and the second source electrode is disposed to the right side of the second drain electrode.
6. The thin film transistor array panel of claim 1 , wherein
the first pixel electrode covers the first gate line in the first direction, and the second pixel electrode covers the second gate line in the first direction.
7. The thin film transistor array panel of claim 6 , wherein
the first pixel electrode does not cover the second gate line, and the second pixel electrode does not cover the first gate line.
8. The thin film transistor array panel of claim 1 , further comprising:
a third gate line neighboring the first gate line and receiving a gate-on voltage before the first gate line,
wherein the first pixel electrode covers the third gate line in the first direction.
9. The thin film transistor array panel of claim 1 , wherein
the first gate line is supplied with a gate-on voltage before the second gate line, and
the second pixel electrode covers the first gate line in the first direction.
10. A thin film transistor array panel comprising:
a plurality of pixel electrodes arranged in a matrix;
a plurality of data lines extending in a first direction such that one data line is disposed per two pixel electrode columns; and
a plurality of gate lines extending in a second direction and disposed in pairs per one pixel electrode row,
where first and second pixel electrodes, among the plurality of data lines, neighbor each other in the second direction with the first data line interposed therebetween,
a first gate line and a second gate line disposed at a first pixel electrode row where the first pixel electrode and the second pixel electrode are disposed,
the first pixel electrode is connected to a first thin film transistor including a first source electrode connected to the first data line, a first drain electrode facing the first source electrode, and a first gate electrode,
the second pixel electrode is connected to a second thin film transistor including a second source electrode connected to the first data line, the second drain electrode facing the second source electrode, and a second gate electrode,
a relative position of the first source electrode with respect to the first drain electrode is the same as a relative position of the second source electrode with respect to the second drain electrode,
the first source electrode is connected to the data line through a first source connection, and the second source electrode is connected to the data line through a second source connection, and
the first source connection is longer than the second source connection.
11. The thin film transistor array panel of claim 10 , wherein
the first gate electrode and the second gate electrode are respectively connected to a different one of the first gate line and the second gate line.