INORGANIC LAYER, DISPLAY DEVICE INCLUDING THE INORGANIC LAYER AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE
Disclosed are an inorganic layer which is formed on one side or both sides of a substrate and has at least a portion irradiated with a laser, a display device including the inorganic layer, and a manufacturing method thereof.
1 . An inorganic layer disposed on one side or both sides of a substrate, wherein at least a portion of the inorganic layer has been irradiated with a laser.
2 . The inorganic layer of claim 1 , wherein the laser-irradiated portion has a layer density at least about 5% higher than a portion not irradiated with the laser.
3 . The inorganic layer of claim 1 , wherein the laser-irradiated portion has a hydrogen content of from about 1% to about 90%, compared with a portion not irradiated with the laser.
4 . The inorganic layer of claim 1 , wherein the inorganic layer includes an inorganic material capable of absorbing the laser.
5 . The inorganic layer of claim 4 , wherein the inorganic material includes an oxide, a nitride or an oxi-nitride of silicon (Si), titanium (Ti), tantalum (Ta), barium (Ba), zinc (Zn), aluminum (Al), or a combination thereof.
6 . The inorganic layer of claim 1 , wherein the inorganic layer is a substrate protective layer, an interlayer insulating layer, an insulation pattern, or a combination thereof.
7 . A display device, comprising:
a substrate;
an inorganic layer formed on one side or both sides of the substrate and having at least a portion irradiated with a laser; and
a device formed on the inorganic layer.
8 . The display device of claim 7 , wherein the laser-irradiated portion of the inorganic layer has a layer density at least about 5% higher than a portion not irradiated with the laser.
9 . The display device of claim 7 , wherein the laser-irradiated portion has a hydrogen content of from about 1% to about 90%, compared with a portion not irradiated with the laser.
10 . The display device of claim 7 , wherein the inorganic layer includes an inorganic material capable of absorbing the laser.
11 . The display device of claim 10 , wherein the inorganic material includes an oxide, a nitride or an oxi-nitride of silicon (Si), titanium (Ti), tantalum (Ta), barium (Ba), zinc (Zn), aluminum (Al) or a combination thereof.
12 . The display device of claim 7 , wherein the substrate is a glass substrate, a polymer film or a silicon wafer.
13 . The display device of claim 7 , wherein the inorganic layer is a substrate protective layer, an interlayer insulating layer, an insulation pattern or a combination thereof.
14 . The display device of claim 7 , wherein the device includes a semiconductor, an electrode, a thin film transistor, an organic light emitting element or a combination thereof.
15 . A method for manufacturing a display device, comprising:
providing an inorganic layer on at least one side of a substrate;
irradiating the inorganic layer with a laser; and
providing a device on the inorganic layer irradiated with the laser.
16 . The method of claim 15 , wherein the laser comprises an excimer laser, a Nd:YAG continuous wave type laser, a Nd:YAG pulse type laser or a carbon dioxide (CO 2 ) laser.
17 . The method of claim 15 , wherein the inorganic layer is formed through a chemical vapor deposition (CVD) process, a sputtering process, or a wet coating process.
18 . The method of claim 15 , wherein the irradiating the inorganic layer with a laser results in the laser-irradiated portion having a layer density at least about 5% higher than a portion not irradiated with the laser.
19 . The method of claim 15 , wherein the irradiating the inorganic layer with a laser results in the laser-irradiated portion having a hydrogen content of from about 1% to about 90%, compared with a portion not irradiated with the laser.
20 . The method of claim 15 , wherein the inorganic layer comprises an oxide, a nitride or an oxi-nitride of silicon (Si), titanium (Ti), tantalum (Ta), barium (Ba), zinc (Zn), aluminum (Al), or a combination thereof.