IP Library Granted Patent US 8,324,076
Granted Patent B2
US 8,324,076 · App. 12/786,462 · Granted Dec 4, 2012

Micro-fluid ejection heads and methods for bonding substrates to supports

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Quick Facts
Patent No.
US 8,324,076
App. No.
12/786,462
Granted
Dec 4, 2012
Kind
B2
Abstract

A substantially planar micro-fluid ejection device, where the micro-fluid ejection head is hermetically sealed and bonded to a support material, and a method of bonding a silicon device, such as a micro-fluid ejection head, to a support material.

Claims (10)

1. A method of bonding a first substrate to a second substrate, comprising:

wetting a surface of the first substrate with an aqueous basic solution;

contacting the wetted surface of the first substrate to a surface of a second substrate, wherein both the first substrate and the second substrate are selected from the group consisting of silicon substrates and silicon oxide substrates, and at least one of the first substrate and the second substrate is substantially composed of silicon; and

wetting the surface of the second substrate with the aqueous basic solution prior to said contacting the wetted surface of the first substrate with the surface of the second substrate.

2. The method of claim 1 , wherein the contacting further comprises applying pressure ranging from about 1 to about 50 psi to the first and second substrates.

3. The method of claim 1 , wherein the basic solution comprises tetramethylammonium hydroxide in an amount ranging from 0.5% by weight to about 5% by weight of the total weight of the solution.

4. The method of claim 1 , wherein the basic solution comprises tetramethylammonium hydroxide in an amount ranging from about 1% by weight to about 3% by weight of the total weight of the solution.

5. The method of claim 1 , wherein the basic solution comprises tetramethylammonium hydroxide further comprising dissolved silicon ranging from about 0.1% by weight to about 10.0% by weight of the total weight of the solution.

6. The method of claim 1 , wherein the contacting is performed under an atmosphere selected from hydrogen gas and a hydrogen-containing forming gas.

7. The method of claim 1 , wherein the contacting is performed at a temperature ranging from about 20° C. to about 90° C. for a duration ranging from about 1 minute to about 15 minutes.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 14, 2013
From: LEXMARK INTERNATIONAL, INC.; LEXMARK INTERNATIONAL TECHNOLOGY, S.A.
To: FUNAI ELECTRIC CO., LTD
Reel/Frame 030416/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 25, 2010
From: BERNARD, DAVID LAURIER; DRYER, PAUL WILLIAM; MCNEES, ANDREW LEE
To: LEXMARK INTERNATIONAL, INC.
Reel/Frame 024435/0695 →