Stimulation electrode

1. A stimulation electrode comprising an electrically conducting base body, wherein the base body encompasses tantalum and

the base body is at least partially covered with a porous tantalum oxide layer, which is anodically applied by means of high voltage pulses,

characterized in that a metallic protective layer covers the porous tantalum oxide layer so as to prevent a hydrogen embrittlement and such that the metallic protective layer is an outer layer of the base body adjacent tissue in which the electrode is implanted;

characterized in that the metallic protective layer encompasses at least one from the following group: platinum, iridium or iridium oxide;

characterized in that the tantalum oxide layer encompasses an inner closed first oxide layer and an outer porous second oxide layer;

characterized in that the metallic protective layer encompasses a layer thickness of between 0.01 μm to 10 μm;

characterized in that the porous tantalum oxide layer encompasses a pore size of between 0.5 μm to 25 μm; and

characterized in that the stimulation electrode and/or the porous tantalum oxide layer in combination with the metallic protective layer encompasses an electric capacitance of at least 5 mF/cm 2 .

2. The stimulation electrode according to claim 1 , characterized in that the porous tantalum oxide layer encompasses a layer thickness of between 1 μm to 20 m, in particular of between 2 μm to 15 μm, in particular of between 3 μm to 10 μm.

3. A stimulation electrode comprising:

an electrically conducting base body consisting of tantalum;

a porous tantalum oxide layer configured to be anodically applied to the base body by means of high voltage pulses; and

a metallic protective layer covering the porous tantalum oxide layer so as to prevent a hydrogen embrittlement and such that the metallic protective layer is an outer layer of the base body adjacent tissue in which the electrode is implanted;

wherein the tantalum oxide layer comprises an inner closed first oxide layer and an outer porous second oxide layer;

wherein the metallic protective layer comprises a layer thickness of between 0.01 μm to 10 μm; and

wherein the stimulation electrode and/or the porous tantalum oxide layer in combination with the metallic protective layer comprises an electric capacitance of at least 5 mF/cm 2 .

4. The stimulation electrode according to claim 3 , wherein the metallic protective layer comprises at least one from the group: platinum, iridium and iridium oxide.

5. The stimulation electrode according to claim 3 , wherein the porous tantalum oxide layer comprises a pore size of between 0.5 μm to 25 μm.

6. The stimulation electrode according to claim 3 , wherein the porous tantalum oxide layer comprises a layer thickness of between 1 μm to 20 μm.

7. A method for producing a stimulation electrode comprising an electrically conducting base body, which encompasses tantalum,

on which a porous tantalum oxide layer is at least partially applied by means of high voltage pulses,

characterized in that a metallic protective layer is applied onto the porous tantalum oxide layer so as to prevent a hydrogen embrittlement of the porous tantalum oxide layer and such that the metallic protective layer is an outer layer of the base body adjacent tissue in which the electrode is implanted; and

wherein the tantalum oxide layer comprises an inner closed first oxide layer and an outer porous second oxide layer;

wherein the metallic protective layer comprises a layer thickness of between 0.01 μm to 10 μm; and

wherein the stimulation electrode and/or the porous tantalum oxide layer in combination with the metallic protective layer comprises an electric capacitance of at least 5 mF/cm 2 .

8. The method according to claim 7 , characterized in that the metallic protective layer is used up by means of at least one of the following methods: sputtering, spraying or evaporation.