Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.
1. An article comprising:
a field effect transistor comprising a semiconductor nanowire and a polymer material deposited on the semiconductor nanowire.
2. The article of claim 1 , wherein the semiconductor nanowire comprises silicon.
3. The article of claim 1 , wherein the semiconductor nanowire has a diameter ranging from about 0.5 nm to about 200 nm.
4. The article of claim 1 , wherein the polymer material is capable of recognizing an analyte in a sample.
5. The article of claim 4 , wherein the polymer material is capable of recognizing the analyte in a gaseous sample.
6. The article of claim 4 , wherein the semiconductor nanowire exhibits a detectable change in an electrical property when less than 10 molecules of the analyte bind to the polymer material.
7. The article of claim 4 , wherein the analyte is a biological moiety.
8. The article of claim 1 , wherein the polymer material comprises polyamide.
9. The article of claim 1 , wherein the polymer material comprises polyester.
10. The article of claim 1 , wherein the polymer material comprises polyimide.
11. The article of claim 1 , wherein the polymer material comprises polyacrylic.
12. The article of claim 1 , where the semiconductor nanowire is one of a plurality of nanowire sensors in a sensor array formed on a surface of a substrate.
13. An article comprising:
a semiconductor nanowire and a polymer material deposited on the semiconductor nanowire; and
a detector constructed and arranged to determine an electrical property associated with the semiconductor nanowire.
14. The article of claim 13 , wherein the semiconductor nanowire comprises silicon.
15. The article of claim 13 , wherein the semiconductor nanowire has a diameter ranging from about 0.5 nm to about 200 nm.
16. The article of claim 13 , wherein the polymer material is capable of recognizing an analyte in a sample.
17. The article of claim 16 , wherein the polymer material is capable of recognizing the analyte in a gaseous sample.
18. The article of claim 16 , wherein the semiconductor nanowire exhibits a detectable change in an electrical property when less than 10 molecules of the analyte bind to the polymer material.
19. The article of claim 16 , wherein the analyte is a biological moiety.
20. The article of claim 13 , where the semiconductor nanowire is one of a plurality of nanowire sensors in a sensor array formed on a surface of a substrate.
21. An article comprising:
a semiconductor nanowire and a polymer material deposited on the semiconductor nanowire; and
a detector constructed and arranged to determine a light emission property associated with the semiconductor nanowire.
22. The article of claim 21 , wherein the semiconductor nanowire comprises silicon.
23. The article of claim 21 , wherein the semiconductor nanowire has a diameter ranging from about 0.5 nm to about 200 nm.
24. The article of claim 21 , wherein the polymer material is capable of recognizing an analyte in a sample.
25. The article of claim 24 , wherein the polymer material is capable of recognizing the analyte in a gaseous sample.
26. The article of claim 24 , wherein the semiconductor nanowire exhibits a detectable change in an electrical property when less than 10 molecules of the analyte bind to the polymer material.
27. The article of claim 24 , wherein the analyte is a biological moiety.
28. The article of claim 21 , where the semiconductor nanowire is one of a plurality of nanowire sensors in a sensor array formed on a surface of a substrate.