Internal power supply circuit, semiconductor device, and semiconductor device manufacturing method

1. A semiconductor device comprising:

a reference potential generating circuit generating a plurality of reference potentials in parallel to each other, the reference potentials being different in temperature dependency from each other;

a control circuit that selects one of the reference potentials;

an internal voltage generating circuit that generates a power supply voltage with reference to the one of the reference potentials; and

an internal circuit that is supplied with the power supply voltage, wherein

the reference potential generating circuit includes a voltage generating circuit that generates a first voltage having a temperature dependency and second and third voltages having no temperature dependency, and is configured to be capable of selecting a voltage value of the second voltage, a voltage value of the third voltage, a change coefficient to be multiplied by a fourth voltage that is obtained by subtracting the second voltage from the first voltage, and a sign of a fifth voltage that is obtained by multiplying the change coefficient by the fourth voltage, and

the reference potential is generated by adding the third voltage to the fifth voltage.

2. The semiconductor device as claimed in claim 1 , wherein the reference potentials include a first reference potential that rises in accordance with increase of a temperature and a second reference potential that falls in accordance with increasing of the temperature.

3. The semiconductor device as claimed in claim 1 , wherein the reference potentials include first and second potentials rising in accordance with increasing of a temperature, and being different in potential rising rate from each other.

4. The semiconductor device as claimed in claim 1 , wherein the reference potentials being equal to each other at a predetermined temperature.

5. The semiconductor device as claimed in claim 1 , wherein the control circuit selects the reference potential based on information stored in a storing circuit that stores therein the information indicating the reference potential to be generated by the reference potential generating circuit.

6. The semiconductor device as claimed in claim 1 , wherein the control circuit selects the reference potential based on a test code signal that is supplied from outside.

7. A semiconductor device comprising:

a reference potential generating circuit including first and second terminals, the reference potential generating circuit being configured to generate first and second reference potentials such that the first reference potential goes up and the second reference potential goes down in accordance with a temperature increase of the semiconductor device, the reference potential generating circuit being configured to supply the first and second reference potentials respectively to the first and second terminals;

a control circuit coupled to the first and second terminals of the reference potential generating circuit to be supplied with the first and second reference potentials, the control circuit including a third terminal and being configured to supply the third terminal with one of the first and second reference potentials;

an internal voltage generating circuit coupled to the third terminal to be supplied with the one of the first and second reference potentials, and the internal voltage generating circuit being configured to generate a power supply voltage with reference to the one of the first and second reference potentials; and

an internal circuit supplied with the power supply voltage.

8. The semiconductor device as claimed in claim 7 , wherein the reference potential generating circuit is configured to generate the first and second reference potentials such that the first potential is going down and the second potential is going up in accordance with decrease of the temperature of the semiconductor device.

9. The semiconductor device as claimed in claim 8 , wherein the first and second reference potentials become equal to each other when the temperature of the semiconductor device takes a predetermined degree.

10. The semiconductor device as claimed in claim 7 , the control circuit includes a first switching circuit coupled between the first and third terminals and a second switching circuit coupled between the second and third terminals, the control circuit being configured to turn on one of the first and second switch circuit and turn off the other of the first and second switch circuit to supply the third terminal with the one of the first and second potentials.