Omnidirectional reflector

1. An omnidirectional reflector comprising:

a multilayer stack having a plurality of layers of high index of refraction material H1, H2, H3 . . . Hn and a plurality of layers of low index of refraction material L1, L2, L3 . . . Lm, said plurality of layers of high index of refraction material and plurality of layers of low index of refraction material alternately stacked on top of each other;

said plurality of layers of high index of refraction material and plurality of layers of low index of refraction material each having a predefined thickness of d H1 , d H2 , d H3 . . . d Hn and d L1 , d L2 , d L3 . . . d Lm , respectively, and said d H1 thickness not generally equal to said d H2 , d H3 . . . or d Hn thickness and said d L1 thickness not generally equal to said d L2 , d L3 . . . or d Lm thickness such that said multilayer stack has a non-periodic layered structure; and

said multilayer stack defining a reflector having a single reflection band with a center wavelength in the visible spectrum, said single reflection band being a reflectance greater than 60% of said center wavelength of a narrow band of electromagnetic radiation, said single reflection band also having a full width at half maximum (FWHM) of less than 200 nanometers and a shift of said center wavelength of less than 75 nanometers when said reflector is viewed from angles between 0 degrees and 45 degrees.

2. The omnidirectional reflector of claim 1 , wherein said reflection band has a FWHM of less than 100 nanometers when viewed from angles between 0 degrees and 65 degrees.

3. The omnidirectional reflector of claim 1 , wherein said reflection band has a FWHM of less than 100 nanometers when viewed from angles between 0 degrees and 90 degrees.

4. The omnidirectional reflector of claim 1 , wherein said high index of refraction material has an index of refraction between 1.5 and 2.5, inclusive, and said low index of refraction material has an index of refraction between 0.75 and 1.75, inclusive.

5. The omnidirectional reflector of claim 1 , wherein said multilayer stack has at least 3 total layers.

6. The omnidirectional reflector of claim 1 , wherein said multilayer stack has at least 7 total layers.

7. The omnidirectional reflector of claim 1 , wherein said multilayer stack has at least 13 total layers.

8. The omnidirectional reflector of claim 1 , wherein said d H1 thickness is not generally equal to said d H2 and d H3 thicknesses and said d L1 thickness is not generally equal to said d L2 and d L3 thicknesses.

9. The omnidirectional reflector of claim 1 , wherein said d H1 thickness is not generally equal to said d H2 , d H3 . . . and d Hn thicknesses.

10. The omnidirectional reflector of claim 1 , wherein said d L1 thickness is not generally equal to said d L2 , d L3 . . . and d Lm thicknesses.

11. The omnidirectional reflector of claim 1 , wherein said d H1 thickness is not generally equal to said d H2 , d H3 . . . and d Hn thicknesses, and said d L1 thickness is not generally equal to said d L2 , d L3 . . . and d Lm thicknesses.

12. The omnidirectional reflector of claim 1 , wherein said multilayer stack is in the form of a flake.

13. The omnidirectional reflector of claim 12 , wherein said flake has an average thickness range of between 0.5 and 5 microns.

14. The omnidirectional reflector of claim 12 , wherein said flake has an average diameter range of between 5 and 50 microns.

15. The omnidirectional reflector of claim 12 , wherein said flake is mixed with a binder to make a paint.

16. A process for omnidirectionally reflecting a narrow band of electromagnetic radiation, the process comprising:

providing a multilayer stack having a plurality of layers of high index of refraction material H1, H2, H3 . . . Hn and a plurality of layers of low index of refraction material L1, L2, L3 . . . Lm alternately stacked on top of each other;

the plurality of layers of high index of refraction material and the plurality of layers of low index of refraction material each having a predefined thickness of d H1 , d H2 , d H3 . . . d Hn , and d L1 , d L2 , d L3 . . . d Lm , respectively, and the d H1 thickness is not generally equal to the d H2 , d H3 . . . or d Hn thickness and the d L1 thickness is not generally equal to the d L2 , d L3 . . . or d Lm thickness such that the multilayer stack has a non-periodic layered structure;

providing a source of broadband electromagnetic radiation;

exposing the multilayer stack to the source of broadband electromagnetic radiation; and

the multilayer stack reflecting a single reflection band with a center wavelength in the visible spectrum, the reflection band having reflectance greater than 60% of the center wavelength of a narrow band of electromagnetic radiation, the reflection band also having a full width at half maximum (FWHM) of less than 200 nanometers and a shift of the center wavelength of less than 75 nanometers when the reflector is viewed from angles between 0 degrees and 45 degrees.

17. The process of claim 16 , wherein the d H1 thickness is not generally equal to the d H2 and d H3 thicknesses and the d L1 is not generally equal to the d L2 and d L3 thicknesses.

18. The process of claim 16 , wherein the multilayer stack is in the form of a flake.