SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A ferroelectric capacitor provided with a ferroelectric film ( 10 a ) is formed above a semiconductor substrate, and thereafter a wiring ( 17 ) directly connected to electrodes ( 9 a , 11 a ) of a ferroelectric capacitor is formed. Then, a silicon oxide film ( 18 ) covering the wiring ( 17 ) is formed. As the silicon oxide film ( 18 ), a film which has processability higher than that of an aluminum oxide film is formed. Besides, a degree of damage that occurs in the ferroelectric capacitor when the insulating film is formed is equal to or less than that when an aluminum oxide film is formed.
1 . A method for manufacturing a semiconductor device, comprising:
forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
forming a wiring directly connected to an electrode of said ferroelectric capacitor; and
forming an insulating film covering said wiring;
wherein a sputtering oxide film is formed as said insulating film and a thickness of said sputtering oxide film is set between 20 nm and 100 nm.
2 . The method for manufacturing a semiconductor device according to claim 1 , further comprising forming an interlayer insulating film over said insulating film.
3 . The method for manufacturing a semiconductor device according to claim 2 , wherein said interlayer insulating film is formed by a plasma CVD method.
4 . The method for manufacturing a semiconductor device according to claim 1 , further comprising the step of forming an aluminum oxide film over said interlayer insulating film.
5 . The method for manufacturing a semiconductor device according to claim 1 , wherein a film containing at least one kind of impurities selected from a group consisting of phosphorous and boron as said sputtering oxide film.
6 . A method for manufacturing a semiconductor device, comprising:
forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
forming a wiring directly connected to an electrode of said ferroelectric capacitor; and
forming an insulating film covering said wiring;
wherein an oxide film is formed by a low pressure CVD method at a temperature of 600° C. or lower as said insulating film.
7 . The method for manufacturing a semiconductor device according to claim 6 , wherein a film containing at least one kind of impurities selected from a group consisting of phosphorous and boron as said oxide film.
8 . A method for manufacturing a semiconductor device, comprising:
forming a ferroelectric capacitor provided with a ferroelectric film above a semiconductor substrate;
forming a wiring directly connected to an electrode of said ferroelectric capacitor; and
forming an insulating film covering said wiring;
wherein an oxide film is formed by an atmospheric pressure CVD method at a temperature between 300° C. and 500° C. as said insulating film.
9 . The method for manufacturing a semiconductor device according to claim 8 , wherein a film containing at least one kind of impurities selected from a group consisting of phosphorous and boron as said oxide film.
10 . The method for manufacturing a semiconductor device according to claim 1 , wherein an oxide film is formed using tetraethylorthosilicate as a raw material, and using ozone as an oxidant as said insulating film.
11 . The method for manufacturing a semiconductor device according to claim 10 , wherein a film containing at least one kind of impurities selected from a group consisting of phosphorous and boron as said oxide film.
12 . The method for manufacturing a semiconductor device according to claim 1 , wherein an oxide film is formed by a two frequency unbiased plasma CVD method as said insulating film.
13 . The method for manufacturing a semiconductor device according to claim 12 , wherein a film containing fluorine is formed as said oxide film.
14 . The method for manufacturing a semiconductor device according to claim 1 , wherein a coating type oxide film is formed as said insulating film.
15 . The method for manufacturing a semiconductor device according to claim 1 , wherein a polyimide film is formed as said insulating film.
16 . The method for manufacturing a semiconductor device according to claim 1 , wherein said the forming said oxide film includes oxidizing a surface of said wiring using oxygen radical.
17 . The method for manufacturing a semiconductor device according to claim 1 , wherein said the forming said oxide film includes oxidizing a surface of said wiring using oxygen plasma.
18 . The method for manufacturing a semiconductor device according to claim 1 , further comprising performing nitrogen gas (N 2 ) annealing to said insulating film.
19 . The method for manufacturing a semiconductor device according to claim 1 , further comprising performing a thermal treatment to said insulating film in a plasma atmosphere.
20 . The method for manufacturing a semiconductor device according to claim 1 , wherein a metal wiring containing aluminum (Al) is formed as said wiring.