Broadband low noise amplifier
View Patent ↗Aspects provide for the broadband amplification of RF signals. Other aspects provide for the conversion of single ended input to differential output. Various aspects provide for tuning the response to a particular frequency band. Other aspects provide for various transconductance elements. In several aspects, broadband current to voltage converters and voltage to current converters are presented. Some implementations incorporate a buffer circuit, and various implementations incorporate feedback circuits.
1. A transconductance element having an input and an output, the transconductance element comprising:
a first and a second transconductance circuit, each transconductance circuit comprising:
an n-type transistor having a shared connection, a load-facing connection and a third connection;
a p-type transistor having a shared connection, a load-facing connection and a third connection; the shared connection of the n-type transistor connected to the shared connection of the p-type transistor;
one or more loads, each load connected to the load-facing connection of either the n-type transistor or the p-type transistor, each load allowing passage of a current; and
a capacitive element having a first connection and a second connection; the first connection of the capacitor connected to the load-facing connection of the n-type transistor and the second connection of the capacitor connected to the load-facing connection of the p-type transistor; and
a bridge connecting a third connection in the first transconductance circuit to a third connection in the second transconductance circuit, wherein the input is connected to a shared connection, and the output is connected to the load-facing connection of at least one transistor that is connected to a load.
2. The transconductance element of claim 1 , further comprising a tune block having an impedance, the tune block connected to a bridge, input or output.
3. The transconductance element of claim 2 , further comprising a substrate upon which the transistors are fabricated, and wherein the tune block is external to the substrate.
4. The transconductance element of claim 1 , wherein the shared connection is a source, the load-facing connection is a drain, and the third connection is a gate.
5. The transconductance element of claim 1 , wherein the one or more loads include(s) an active load.
6. The transconductance element of claim 1 , wherein the one or more loads includes a transistor.
7. The transconductance element of claim 1 , wherein the one or more loads includes a capacitor.
8. The transconductance element of claim 1 , wherein the one or more loads includes a resistor.
9. The transconductance element of claim 1 , wherein the capacitive element includes a capacitor having a first connection and a second connection, the first connection of the capacitor is connected to the first connection of the capacitive element, and the second connection of the capacitor is connected to the second connection of the capacitive element.
10. The transconductance element of claim 1 , wherein the first and the second transconductance circuit each further comprise an input capacitive element having a first connection and a second connection, wherein the first connection of the input capacitive element is connected to the input and the second connection of the input capacitive element is connected to the shared connection of the n-type transistor and to the shared connection of the p-type transistor.
11. The transconductance element of claim 10 , wherein the input capacitive element includes a capacitor having a first connection and a second connection, the first connection of the capacitor is connected to the first connection of the input capacitive element, and the second connection of the capacitor is connected to the second connection of the input capacitive element.
12. A transconductance element having an input and an output, the transconductance element comprising:
first and second transconductance circuits, each transconductance circuit comprising:
an n-type transistor having a shared connection, a load-facing connection and a third connection;
a p-type transistor having a shared connection, a load-facing connection and a third connection, the shared connection of the n-type transistor connected to the shared connection of the p-type transistor;
one or more loads, each load connected to the load-facing connection of either the n-type transistor or the p-type transistor, each load allowing passage of a current; and
a capacitive element having a first connection and a second connection; the first connection of the capacitor connected to the load-facing connection of the n-type transistor and the second connection of the capacitor connected to the load-facing connection of the p-type transistor;
a first bridge connecting a third connection in the first transconductance circuit to a shared connection in the second transconductance circuit;
a second bridge connecting a third connection in the second transconductance circuit to a shared connection in the first transconductance circuit; and
a third bridge connecting a third connection in the first transconductance circuit to a third connection in the second transconductance circuit, wherein the input is connected to a shared connection and the output is connected to the load-facing connection of at least one transistor that is connected to a load.
13. The transconductance element of claim 12 , further comprising a tune block having an impedance, the tune block connected to a bridge, input or output.
14. The transconductance element of claim 13 , further comprising a substrate upon which the transistors are fabricated, and wherein the tune block is external to the substrate.
15. The transconductance element of claim 12 , wherein the shared connection is a source, the load-facing connection is a drain, and the third connection is a gate.
16. The transconductance element of claim 12 , wherein the one or more loads include(s) an active load.
17. The transconductance element of claim 12 , wherein the one or more loads includes a transistor.
18. The transconductance element of claim 12 , wherein the one or more loads includes a capacitor.
19. The transconductance element of claim 12 , wherein the one or more loads includes a resistor.
20. The transconductance element of claim 12 , wherein the capacitive element includes a capacitor having a first connection and a second connection, the first connection of the capacitor is connected to the first connection of the capacitive element, and the second connection of the capacitor is connected to the second connection of the capacitive element.
21. The transconductance element of claim 12 , wherein the first and the second transconductance circuit each further comprise an input capacitive element having a first connection and a second connection, wherein the first connection of the input capacitive element is connected to the input and the second connection of the input capacitive element is connected to the shared connection of the n-type transistor and to the shared connection of the p-type transistor.
22. The transconductance element of claim 21 , wherein the input capacitive element includes a capacitor having a first connection and a second connection, the first connection of the capacitor is connected to the first connection of the input capacitive element, and the second connection of the capacitor is connected to the second connection of the input capacitive element.