Method for forming lens, method for manufacturing semiconductor apparatus, and electronic information device
A lens forming method according to the present invention for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting of a semiconductor apparatus is described. The method includes a lens forming step of processing a lens forming material, in which an average gradient of a γ curve indicating a residual film thickness with respect to the amount of irradiation light is between −15 and −0.8 nm·cm 2 /mJ within the range of a residual film ratio of 10 to 50% or within the range of the amount of irradiation light of 55 to 137 mJ/cm 2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to a lens surface shape, as an exposure mask.
1. A lens forming step comprising method for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting a semiconductor apparatus, the method comprising a lens forming step of processing a lens forming material, in which an average gradient of a Γ curve indicating a residual film thickness with respect to an amount of irradiation light is between −15 and −0.8 nm-cm2/mJ within a range of a residual film ratio of 10 to 50% or within a range of an amount of irradiation light of 55 to 137 mJ/cm2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to the lens surface shape, as an exposure mask.
2. The lens forming method according to claim 1 , wherein the method uses the lens forming material, in which the average gradient of the Γ curve is between −15 and −2 nm·cm2/mJ.
3. The lens forming method according to claim 1 , wherein the method uses the lens forming material, in which the average gradient of the Γ curve is between −10 and −2 nm·cm2/mJ.
4. The lens forming method according to claim 1 , wherein the photomask is made of a dot pattern that is finer than an exposure wavelength, and cannot be resolved with the exposure wavelength used for forming the lens.
5. The lens forming method according to claim 4 , wherein the exposure wavelength is an i-ray of a 365 nm exposure wavelength for forming the lens.
6. A method for manufacturing a semiconductor apparatus, comprising:
a diffusion region forming step of forming, for each pixel, a photoelectric conversion section, a read-out gate section, a transfer channel section, and a channel stopper section in this order adjacent to each other by selectively performing impurity ion implantation on a predetermined region in a semiconductor substrate;
a gate electrode forming step of forming a gate electrode for reading out a signal charge from the photoelectric conversion section through the read-out gate section to the transfer channel section for electric charge transferring, above the read-out gate section and the transfer channel section with a gate insulation layer interposed therebetween;
a light shielding layer forming step of forming a light shielding layer which is formed above the gate electrode with an interlayer insulation layer interposed therebetween and covers up to and including an end surface side of the gate electrode and has an opening above the photoelectric conversion section; a planarization layer forming step of forming a planarization layer above the gate insulation layer and the light shielding layer with an interlayer insulation layer interposed therebetween; and
forming a lens on the planarization layer by a lens forming step; wherein
the lens forming step comprising method for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting a semiconductor apparatus, the method comprising a lens forming step of processing a lens forming material, in which an average gradient of a Γ curve indicating a residual film thickness with respect to an amount of irradiation light is between −15 and −0.8 nm-cm2/mJ within a range of a residual film ratio of 10 to 50% or within a range of an amount of irradiation light of 55 to 137 mJ/cm2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to the lens surface shape, as an exposure mask.
7. The method for manufacturing a semiconductor apparatus according to claim 6 , further including an inner-layer lens forming step of forming an inner-layer lens between the interlayer insulation layer and the planarization layer in the planarization layer forming step.
8. The method for manufacturing a semiconductor apparatus according to claim 6 , further including forming an inner-layer lens on a surface of the interlayer insulation layer in the planarization layer forming step after the surface is planarized, as an inner-layer lens forming step.
9. The method for manufacturing a semiconductor apparatus according to claim 6 , further including a color filter forming step of forming, between the planarization layer and the lens, a color filter with a predetermined color arrangement and a planarization layer thereon for each pixel.
10. The method for manufacturing a semiconductor apparatus according to claim 6 , wherein the method manufactures a CCD type solid-state image capturing element including disposed therein a plurality of light receiving sections for performing a photoelectric conversion on and capturing an image of image light from a subject.
11. An electronic information device including a solid-state image capturing element manufactured using the method for manufacturing a semiconductor apparatus according to claim 10 , used as an image input device in an image capturing section thereof.
12. A method for manufacturing a semiconductor apparatus, comprising:
a photoelectric conversion section forming step of forming a photoelectric conversion section for each pixel by selectively performing impurity ion implantation on a predetermined region in a semiconductor substrate;
a gate electrode forming step of forming a gate electrode for transferring a signal charge from the photoelectric conversion section, on a predetermined region adjacent to the photoelectric conversion section of the semiconductor substrate with a gate insulation layer interposed therebetween;
a planarization layer forming step of forming planarization layer above the gate electrode and the gate insulation layer with an interlayer insulation layer interposed therebetween; and
forming a lens on the planarization layer by a lens forming step; wherein
the lens forming step comprising method for forming lenses capable of focusing light on a plurality of respective photoelectric conversion sections constituting a semiconductor apparatus, the method comprising a lens forming step of processing a lens forming material, in which an average gradient of a Γ curve indicating a residual film thickness with respect to an amount of irradiation light is between −15 and −0.8 nm-cm2/mJ within a range of a residual film ratio of 10 to 50% or within a range of an amount of irradiation light of 55 to 137 mJ/cm2 into a lens surface shape, using a photomask with an optical transmittance that is varied according to the lens surface shape, as an exposure mask.
13. The method for manufacturing a semiconductor apparatus according to claim 12 , further including an inner-layer lens forming step of forming an inner-layer lens between the interlayer insulation layer and the planarization layer in the planarization layer forming step.
14. The method for manufacturing a semiconductor apparatus according to claim 12 , further including forming an inner-layer lens on a surface of the interlayer insulation layer in the planarization layer forming step after the surface is planarized, as an inner-layer lens forming step.
15. The method for manufacturing a semiconductor apparatus according to claim 12 , further including a color filter forming step of forming, between the planarization layer and the lens, a color filter with a predetermined color arrangement and a planarization layer thereon for each pixel.
16. The method for manufacturing a semiconductor apparatus according to claim 12 , wherein the method manufactures a CMOS type solid-state image capturing element including disposed therein a plurality of light receiving sections for performing a photoelectric conversion on and capturing an image of image light from a subject.
17. An electronic information device including a solid-state image capturing element manufactured using the method for manufacturing a semiconductor apparatus according to claim 16 , used as an image input device in an image capturing section thereof.
18. The method for manufacturing a semiconductor apparatus according to claim 12 , wherein the method manufactures a CCD type solid-state image capturing element including disposed therein a plurality of light receiving sections for performing a photoelectric conversion on and capturing an image of image light from a subject.
19. An electronic information device including a solid-state image capturing element manufactured using the method for manufacturing a semiconductor apparatus according to claim 18 , used as an image input device in an image capturing section thereof.
20. The method for manufacturing a semiconductor apparatus according to claim 12 , wherein the method manufactures a light emitting element for emitting output light and a light receiving element for receiving incident light.
21. An electronic information device including a light emitting element and a light receiving element manufactured using the method for manufacturing a semiconductor apparatus according to claim 20 , used in an information recording and reproducing section thereof.